Author : Michael Reisch
Publisher : Springer Science & Business Media
Page : 671 pages
File Size : 21,6 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 364255900X
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : Mikael Sahrling
Publisher : Artech House
Page : 355 pages
File Size : 35,58 MB
Release : 2022-08-31
Category : Technology & Engineering
ISBN : 1630819115
This book provides complete step-by-step guidance on the physical implementation of modern integrated circuits, showing you their limitations and guiding you through their common remedies. The book describes today’s manufacturing techniques and how they impact design rules. You will understand how to build common high frequency devices such as inductors, capacitors and T-coils, and will also learn strategies for dealing with high-speed routing both on package level and on-chip applications. Numerous algorithms implemented in Python are provided to guide you through how extraction, netlist comparison and design rule checkers can be built. The book also helps you unravel complexities that effect circuit design, including signal integrity, matching, IR drop, parasitic impedance and more, saving you time in addressing these effects directly. You will also find detailed descriptions of software tools used to analyze a layout database, showing you how devices can be recognized and connectivity accurately assessed. The book removes much of fog that often hides the inner workings of layout related software tools and helps you better understand: the physics of advanced nodes, high speed techniques used in modern integrated technologies, and the inner working of software used to analyze layout databases. This is an excellent resource for circuit designers implementing a schematic in a layout database, especially those involved in deep submicron designs, as well as layout designers wishing to deepen their understanding of modern layout rules.
Author : John D. Cressler
Publisher : CRC Press
Page : 468 pages
File Size : 21,14 MB
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 1420066919
SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.
Author : Halit Eren
Publisher : CRC Press
Page : 297 pages
File Size : 10,13 MB
Release : 2024-11-26
Category : Technology & Engineering
ISBN : 1040185584
This book heralds a new era in instrumentation and measurements. It combines artificial intelligence (AI) and wireless communications technologies with instrumentation and measurement systems to function as a single unit. AI has advanced considerably due to deep learning utilizing artificial neural networks, availability of large and curated datasets, implementation of a new generation of fast processors having millions of transistors in chips, advanced algorithms, competitive commercial interests, and interests of governments to gain advantages. At the same time, new and highly advanced wireless technologies open new frontiers in communication systems, both technologically and in terms of applications aspects. Advanced technologies such as 5G and 6G networks enable easy use of communication systems by billions of people as well as by billions of machine-to-machine systems. In this book, the communication principles are explained and the implementation of AI on wireless networks is discussed. Many examples are provided. The author discusses instruments and instrumentation networks, modern sensors, and transducers in detail. AI is the technology humans have created where the machines do not only assist us but also think for us creatively in some cases, excelling humans thinking and reasoning. This book includes a chapter explaining how this is done, backed up with more than 50 figures. The security issues, fairness, efficiency, and social impact and acceptance of AI are highlighted. As explained in this book, AI and wireless communications are changing our lives in many ways, including entertainment, games, social interactions, medicine and healthcare, R&D, automated living, intelligent transport systems, finance and economy, and the Internet of Things.
Author : John D. Cressler
Publisher : CRC Press
Page : 1249 pages
File Size : 12,34 MB
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 1420026585
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author : John D. Cressler
Publisher : CRC Press
Page : 360 pages
File Size : 24,42 MB
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 1420066951
No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.
Author : Tho T. Vu
Publisher : World Scientific
Page : 366 pages
File Size : 26,42 MB
Release : 2003-01-01
Category : Technology & Engineering
ISBN : 9789812796844
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC''s (T Otsuji); The Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Author : Raminderpal Singh
Publisher : John Wiley & Sons
Page : 368 pages
File Size : 16,45 MB
Release : 2004-03-15
Category : Technology & Engineering
ISBN : 0471660914
"An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM
Author : Antonio R. Alvarez
Publisher : Springer
Page : 330 pages
File Size : 15,87 MB
Release : 2013-03-03
Category : Technology & Engineering
ISBN : 9781475720310
The topic of bipolar compatible CMOS (BiCMOS) is a fascinating one and of ever-growing practical importance. The "technology pendulum" has swung from the two extremes of preeminence of bipolar in the 1950s and 60s to the apparent endless horizons for VLSI NMOS technology during the 1970s and 80s. Yet starting in the 1980s severallimits were clouding the horizon for pure NMOS technology. CMOS reemerged as a· viable high density, high performance technology. Similarly by the mid 1980s scaled bipolar devices had not only demonstrated new high speed records, but early versions of mixed bipolar/CMOS technology were being produced. Hence the paradigm of either high density . Q[ high speed was metamorphasizing into an opportunity for both speed and density via a BiCMOS approach. Now as we approach the 1990s there have been a number of practical demonstrations of BiCMOS both for memory and logic applications and I expect the trend to escalate over the next decade. This book makes a timely contribution to the field of BiCMOS technology and circuit development. The evolution is now indeed rapid so that it is difficult to make such a book exhaustive of current developments. Probably equally difficult is the fact that the new technology opens a range of novel circuit opportunities that are as yet only formative in their development. Given these obstacles it is a herculean task to try to assemble a book on BiCMOS.
Author : Chinmay Kumar Maiti
Publisher : World Scientific
Page : 465 pages
File Size : 29,27 MB
Release : 2016-10-27
Category : Technology & Engineering
ISBN : 9814713090
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
