Defects in Electronic Materials:


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Defects in Electronic Materials: Volume 104


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Electronic Materials


Book Description

Modem materials science is exploiting novel tools of solid-state physics and chemistry to obtain an unprecedented understanding of the structure of matter at the atomic level. The direct outcome of this understanding is the ability to design and fabricate new materials whose properties are tailored to a given device ap plication. Although applications of materials science can range from low weight, high strength composites for the automobile and aviation industry to biocompat ible polymers, in no other field has progress been more strikingly rapid than in that of electronic materials. In this area, it is now possible to predict from first principles the properties of hypothetical materials and to construct artificially structured materials with layer-by-Iayer control of composition and microstruc ture. The resulting superlattices, multiple quantum wells, and high temperature superconductors, among others, will dominate our technological future. A large fraction of the current undergraduate and graduate students in science and engi neering will be directly involved in furthering the revolution in electronic mate rials. With this book, we want to welcome such students to electronic materials research and provide them with an introduction to this exciting and rapidly de veloping area of study. A second purpose of this volume is to provide experts in other fields of solid state physics and chemistry with an overview of contemporary research within the field of electronic materials.




Defects in Semiconductors


Book Description

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors




Defects in Electronic Materials II: Volume 442


Book Description

The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.




Concise Encyclopedia of Semiconducting Materials & Related Technologies


Book Description

The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.




Compound Semiconductor Devices


Book Description

Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.




Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon


Book Description

This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.




High Resolution Electron Microscopy of Defects in Materials: Volume 183


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




Deep Centers in Semiconductors


Book Description

Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR