Disordered Semiconductors


Book Description

Twenty-four years ago, Hellmut Fritzsche came to our laboratory to evaluate our work in amorphous materials. He came many times, sometimes bringing his violin to play with our youngest son, to talk, to help, to discover, and to teach. The times with him were always exciting and rewarding. There was a camaraderie in the early years that has continued and a friendship that has deepened among Iris and me and Hellmut, Sybille and their children. The vision that Hellmut Fritzsche shared with me, the many important contributions he made, the science that he helped so firmly to establish, the courage he showed in the time of our adversity, and the potential that he recognized put all of us in the amorphous field, not only his close friends and collaborators, in his debt. He helped make a science out of intuition, and played an important role not only in the experimental field but also in the basic theoretical aspects. It has been an honor to work with Hellmut through the years.




Disordered Semiconductors Second Edition


Book Description

Devices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline)




Disordered Materials


Book Description

Landmark contributions to science and mechanisms for the origin of the phenomena, and technology are rarely recognized at the time of reached important conclusions about the physical publication. Few people, even in technical areas, nature of the materials at equilibrium and their recogni zed the importance of developments such as electronic nonequilibrium properties. Many of these the transistor, the laser, or electrophotography ideas were condensed into a publication for Physical until well after their successful demonstration. Review Letters, paper 1 in this collection. This So-called experts, in fact, tend to resist new paper immediately attracted attention to the field, inventions, a natural instinct based on a combina and directly lead to the initiation of large research tion of fear of obsolescent expertise and jealousy efforts at both industrial laboratories and univer- arising from lack of active participation in the ties throughout the world. Inevitably, there was discovery. the usual amount of controversy, with many experts Denigration of new ideas is a relatively simultaneously taking positions (2) and (3) above. safe modus operandi, since the vast majority It has now been well over 20 years since eventually are abandoned well short of commerciality. the original publication date, and an objective view However, a successful device can be identified by can be taken in hindsight.




Charge Transport in Disordered Solids with Applications in Electronics


Book Description

The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. International group of contributors Presents basic physical concepts developed in this field in recent years in a uniform manner Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials




Physics of Structurally Disordered Solids


Book Description

Structurally disordered solids are characterized by their lack of spatial order that is evidenced by the great variety of ordered solids. The former class of materials is commonly termed amorphous or glassy, the latter crystalline. However, both classes share, many of the other physical properties of solids, e. g. , me chanical stability, resistance to shear stress, etc. The traditional macroscopic distinction between the crystalline and the glassy states is that while the former has a fixed melting point, the latter does not. However, with the availability and production of a large number of materials in both crystalline and amorphous states, and their easy inter-convertability, simple de finitions are not possible or at best imprecise. For the present purpose, it is sufficient to say that in contrast to the crystalline state, in which the posi tions of atoms are fixed into adefinite structure, ex cept for small thermal vibrations, the amorphous state of the same material displays varying degrees of de parture from this fixed structure. The amorphous state almost always shows no long range order. Short range order, up to several neighbors, may often be retained, although averaged considerably around their crystalline values. It is generally believed that the amorphous state is a metastable one with respect to the crystal line ordered state, and the conversion to the crystal line state may or may not be easy depending on the na ture of the material, e. g.




Defects in Organic Semiconductors and Devices


Book Description

Defects play a key role in the physical properties of semiconductors and devices, and their identification is essential in assessing the reliability of electronic devices. Defects in Organic Semiconductors and Devices introduces the fundamental aspects of defects in organic semiconductors and devices in relation to the structure of materials and architecture of electronic components. It covers the topics of defect formation and evolution, defect measurement techniques and their adaption to organic devices, the effects of defects on the physical properties of materials and their effects on the performance and lifetime of organic devices. Identifying defects and determining their characteristics in the structure of organic devices such as OLEDs, OFETs and OPVs make it possible to better understand degradation processes and develop solutions to improve the reliability of such devices. This book is intended for researchers and students in university programs or engineering schools who are specializing in electronics, energy and materials.




Hopping And Related Phenomena


Book Description

This review volume contains articles on the recent developments, new ideas, as well as controversial issues dealing with the general phenomena of hopping transport in disordered systems. Examples of hopping systems of current interest are polymers and biological materials, mesoscopic systems, two- and one-dimensional systems such as MOSFETs, semiconductors near the metal-nonmetal transition, and the new high temperature superconducting materials (in their normal state). The fundamental problems addressed include effects of static and dynamic interactions with phonons, Coulomb interaction, new magnetic effects due to coherent scattering, effects of high electric fields, and relaxation phenomena.




Coherent Semiconductor Optics


Book Description

This book introduces the basic theoretical concepts required for the analysis of the optical response of semiconductor systems in the coherent regime. It is the most instructive textbook on the theory and optical effects of semiconductors. The entire presentation is based on a one-dimensional tight-binding model. Starting with discrete-level systems, increasing complexity is added gradually to the model by including band-structure and many-particle interaction. Various linear and nonlinear optical spectra and temporal phenomena are studied. The analysis of many-body effects in nonlinear optical phenomena covers a major part of the book.




Nanomaterials Imaging Techniques, Surface Studies, and Applications


Book Description

This book presents cutting-edge research on a wide range of nanotechnology techniques and applications. It features contributions from scientists who participated in the International Summer School “Nanotechnology: From Fundamental Research to Innovations” in Bukovel, Ukraine on August 26 – September 2, 2012 funded by the European Commission FP7 project Nanotwinning implemented by the Institute of Physics of National Academy of Sciences of Ukraine and partner institutions: University of Tartu (Estonia), European Profiles A.E. (Greece), University of Turin (Italy) and Université Pierre et Marie Curie (France). Worldwide experts present the latest results on such key topics as microscopy of nanostructures; nanocomposites; nanostructured interfaces and surfaces; nanooptics; nanoplasmonics; and enhanced vibrational spectroscopy. Imaging technique coverage ranges from atomic force microscopy and spectroscopy, multiphoton imagery, and laser diagnostics of nanomaterials and nanostructures, to resonance Raman and SERS for surface characterization, and scanning tunneling microscopy of organic molecules. The breadth of topics highlights the exciting variety of research currently being undertaken in this field and suggests new opportunities for interdisciplinary collaboration and future research.




Disorder and Order in the Solid State


Book Description

This Festschrift is an outgrowth of a collection of papers presented as a conference in honor of Professor Heinz K. Henisch on his sixty-fifth birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has made seminal contributions to the understanding of semiconductor switching devices and contact properties. He has an outstandin~ reputation as an expositor of science. His seminars and lectures are always deep. lucid and witty. He received his doctorate in Physics from the University of Reading and then joined the faculty. In 1963. he accepted a position in the Department of Physics at Pennsylvania State University. While at Penn State. Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institute of Physics. London. the Royal Photographic society and is a Corresponding Member of the Deutsche Gesellschaft fur Photographie. In addition to his considerable publication in the fields of physics and the history of photography. Dr. Henisch is the founder and editor of the Journal of the History of Photography published quarterly by Taylor and Francis. Ltd .. London.