Book Description

V. Boundary conditions and dispersion. 5.1. Dielectric-dielectric interface. Node coupling: nearest node and multi-coupled node approximations. 5.2. Nearest nodes for ID interface. 5.3. Nearest nodes at 2D interface. 5.4. Truncated cell and oblique interface. 5.5. Single index cell notation. 5.6. Simplified iteration neglecting the nearest node approximation. 5.7. Non-uniform dielectric. Use of cluster cells. Other boundary conditions. 5.8. Dielectric- open circuit interface. 5.9. Dielectric - conductor interface. 5.10. Input/output conditions. 5.11. Composite transmission line. 5.12. Determination of initial static field by TLM method. 5.13. Time varying source voltage and antenna simulation. Dispersion. 5.14. Dispersion sources. 5.15. Dispersion example. 5.16. Propagation velocity in terms of wave number. 5.17. Dispersive properties of node resistance. 5.18. Node resistance in terms of wave number. 5.19. Anomalous dispersion. Incorporation of dispersion into TLM formulation. 5.20. Dispersion approximations. 5.21. Outline of dispersion calculation using the TLM method. 5.22. One dimensional dispersion iteration. 5.23. Initial conditions with dispersion present. 5.24. Stability of initial profiles with dispersion present. 5.25. Replacement of non-uniform field in cell with effective uniform field -- VI. Cell discharge properties and integration of transport phenomena into the TLM matrix. 6.1. Charge transfer between cells. 6.2. Relationship between field and cell charge. 6.3. Dependence of conductivity on carrier properties. Integration of carrier transport using TLM notation. Changes in cell occupancy and its effect on TLM iteration. 6.4. General continuity equations. 6.5. Carrier generation due to light activation. 6.6. Carrier generation due to avalanching: identical hole and electron drift velocities. 6.7. Avalanching with differing hole and electron drift velocities. 6.8. Two step generation process. 6.9. Recombination. 6.10. Limitations of simple exponential recovery model. 6.11. Carrier drift. 6.12. Cell charge iteraction.equivalence of drift and inter-cell currents. 6.13. Carrier diffusion. 6.14. Frequency of transport iteration. 6.15. Total contribution to changes in carrier cell occupancy -- VII. Description of TLM iteration. 7.1. Specification of geometry. 7.2. Description of inputs and TLM iteration outline. 7.3. Output format. Output simulation data. 7.4. Conditions during simulation. 7.5. Behavior during charge-up.establishment of static field profile. 7.6. Node resistance R(n,m) during activation. 7.7. Output pulse when semiconductor is activated. 7.8. Node recovery and its effect on output pulse. 7.9. Steady state and transient field profiles. 7.10. Partial activation of nodes and effect on profiles and output. 7.11. Cell charge following recovery. 7.12. Role ofTLM waves at charged boundary. 7.13. Comparison of possible boundary conditions at the semiconductor/dielectric interface. 7.14. Simulation results for boundary with non-integral nearest nodes. 7.15. Comparison of output with and without matched input /output lines. 7.16. Simulation of plane wave effects. Effect of alternating input -- VIII. Spice solutions. 8.1. Photoconductive switch. 8.2. Traveling wave Marx generator. 8.3. Traveling Marx wave in a layered dielectric. 8.4. Simulation of a traveling Marx wave in a layered dielectric. Pulse transformation and generation using non-uniform transmission lines. 8.5. Use of cell chain to simulate pulse transformer. 8.6. Pulse transformer simulation results. 8.7. Pulse sources using non-uniform TLM lines (switch at output). 8.8. Radial pulse source (switch at output). 8.9. Pulse sources with gain (PFXL sources). Darlington pulser. 8.10. TLM formulation of Darlington pulser. 8.11. SPICE simulation of Lossy Darlington Pulser.