› › Festkorper Probleme Ix

Festkörper Probleme IX

Author : O. Madelung

Publisher : Elsevier

Page : 401 pages

File Size : 48,90 MB

Release : 2013-10-22

Category : Science

ISBN : 1483145913

Get eBook

Book Description

Festkörper Probleme IX: Advances in Solid State Physics presents a model for the behavior of electrons in non-crystalline materials. This book describes some experimental evidence that supports for the behavior of electrons. Organized into 16 chapters, this book begins with an overview of crystallization, glass forming, and melting processes in systems forming chalcogenide glasses. This text then describes the theory of the transport properties of electrons in non-crystalline solids and liquids. Other chapters consider the optical and electrical properties of amorphous semiconductors wherein the treatment is mainly restricted to the elements selenium, germanium, and tellurium. This book discusses as well the basic aspects of the optical phenomena of the Jahn–Teller effect, with emphasis on some criteria of the strength and observability of the Jahn–Teller effect. The final chapter deals with the methods for processing emulsion and metal film masks. This book is a valuable resource for solid state physicists.



Festkörper Probleme

Author : O. Madelung

Publisher : Elsevier

Page : 293 pages

File Size : 19,29 MB

Release : 2017-07-31

Category : Technology & Engineering

ISBN : 1483155978

Get eBook

Book Description

Festkorper Probleme VII covers papers of the European Meeting of the IEEE about Semiconductor Device Research. The book includes papers about the advances in band structures investigations using optical techniques; some problems in the physics of power rectifiers and thyristors; the surface properties of thermally oxidized silicon; and the amplification of acoustic waves at microwave frequencies. The text also presents papers about active thin film devices, optoelectronic devices, and negative conductance in semiconductors. Electrical engineers will find the book invaluable.



Festkörper Probleme VIII

Author : O. Madelung

Publisher : Elsevier

Page : 321 pages

File Size : 13,73 MB

Release : 2013-09-11

Category : Science

ISBN : 1483140342

Get eBook

Book Description

Festkörper Probleme VIII reviews the status of radiation damage in semiconducting materials and components. This book examines the problems connected to the mechanism of production of defects by bombardment with energetic particles, particularly the displacement energy. Comprised of nine chapters, this book begins with an overview of the microstructure of radiation defects in silicon, which is known from optical absorption experiments and electron spin resonance. This text then explains the preparation of single crystals of high purity or defined impurity contents, which is the basis of successful solid state research. Other chapters consider the widespread application of vapor phase reactions. This book discusses as well mechanism of latent image formation, which considers some advances in silver halide research. The final chapter explains the useful information that can be obtained by a study of the field effects. This book is a valuable resource for solid state physicists as well as applied physicists.



Festkörper Probleme XI

Author : O. Madelung

Publisher : Elsevier

Page : 313 pages

File Size : 50,36 MB

Release : 2016-06-06

Category : Science

ISBN : 1483150658

Get eBook

Book Description

Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.



Festkörper Probleme

Author : H. J. Queisser

Publisher : Elsevier

Page : 405 pages

File Size : 10,46 MB

Release : 2013-10-22

Category : Science

ISBN : 1483157679

Get eBook

Book Description

Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper reviews the findings on experiments on the magnetic, optical, electrical, and structural properties of layer type crystals, particularly metal dichalcogenides. This book then discusses the van der Waals attraction using semi-classical methods to explain the correlation in different atoms. This discussion explains the application of the Schrodinger formalism and the Maxwell equations. One paper also reviews the energy distribution of electrons emitted from solids after ultraviolet radiation or monochromatic X-ray exposure. Another paper reviews the use of clean silicon surfaces associated with electron emitters showing ""negative electron affinity."" A paper then reviews the mechanism of charge-transfer devices, with emphasis on the physics of the transfer processes that happen in surface charge-coupled devices or bulk-charge-couple devices. This compendium will prove useful for materials physicists, scientists, and academicians in the field of advanced physics.



Semiconductors

Author : T. F. Connolly

Publisher : Springer Science & Business Media

Page : 223 pages

File Size : 41,43 MB

Release : 2012-12-06

Category : Science

ISBN : 1468462016

Get eBook

Book Description

And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...



Semiconductor Physics

Author : Karlheinz Seeger

Publisher : Springer Science & Business Media

Page : 534 pages

File Size : 11,97 MB

Release : 2013-06-29

Category : Technology & Engineering

ISBN : 3662037971

Get eBook

Book Description

This book will be useful to solid-state scientists, device engineers, and students involved in semiconductor design and technology. It provides a lucid account of band structure, density of states, charge transport, energy transport, and optical processes, along with a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, and the quantum Hall effect. This 7th edition has been revised and updated, including several new sections.



Raman Spectroscopy

Author : Herman Szymanski

Publisher : Springer Science & Business Media

Page : 226 pages

File Size : 37,45 MB

Release : 2013-06-29

Category : Science

ISBN : 1468430270

Get eBook

Book Description

Raman Spectroscopy, Volume 1, was conceived to provide integrated and comprehensive coverage of all aspects of the field by a group of specialists. However, in the three years since the first volume was published much important work has been done. Since Volume 1 was very well received, this second volume has been prepared in the belief that an extension of the coverage it offers will satisfy a real need in this rapidly changing and extremely interesting field. Any pretension to comprehensive coverage, however, had to be abandoned. In order to keep the material in a work of this nature up to date, a cutoff date has to be set. Inevitably one or two of the planned articles fail to materialize by this deadline, and other interesting topics may come into focus too late to permit the preparation of a worthwhile discussion by the target date. Still, in fairness to those authors who kept to the schedule, the cutoff date has to be enforced, even though this means sacrificing breadth of coverage to timeliness. I wish to thank all the contributors to this volume for their effort, their cooperation, and their punctuality, and it is my hope that the policy I have followed will result in the presentation of current thought on a series of interesting aspects of the subject of Raman spectroscopy. May 1970 H.A.S. Contents Chapter 1 Vibrational Rules of Selection and Polarization: Their Practical Uses and Limitations .................... .



Physics of Nonlinear Transport in Semiconductors

Author : David K. Ferry

Publisher : Springer Science & Business Media

Page : 620 pages

File Size : 31,26 MB

Release : 2012-12-06

Category : Technology & Engineering

ISBN : 1468436384

Get eBook

Book Description

The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.