GANs in Action


Book Description

Deep learning systems have gotten really great at identifying patterns in text, images, and video. But applications that create realistic images, natural sentences and paragraphs, or native-quality translations have proven elusive. Generative Adversarial Networks, or GANs, offer a promising solution to these challenges by pairing two competing neural networks' one that generates content and the other that rejects samples that are of poor quality. GANs in Action: Deep learning with Generative Adversarial Networks teaches you how to build and train your own generative adversarial networks. First, you'll get an introduction to generative modelling and how GANs work, along with an overview of their potential uses. Then, you'll start building your own simple adversarial system, as you explore the foundation of GAN architecture: the generator and discriminator networks. Purchase of the print book includes a free eBook in PDF, Kindle, and ePub formats from Manning Publications.




Gallium-Nitride (GaN) II


Book Description

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.




GaN Transistors for Efficient Power Conversion


Book Description

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.




GaN-based Materials and Devices


Book Description

The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.




GaN and Related Materials II


Book Description

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.




GaN and Related Materials


Book Description

Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.










Infinite Bandwidth


Book Description

Franciscan University of Steubenville Professor Eugene Gan authors this first-of-its-kind Catholic roadmap for the digital age: Infinite Bandwidth: Encountering Christ in the Media. He navigates you faithfully through the digital world, encouraging frustrated parents not to throw out cell phones, ban the Internet, chuck computers, or pitch portable media devices. That would be a mistake and believe it or not would be going against more than seven decades of Catholic teaching. From Church documents on social communications, Gan extracts seven principles or "media keys" of how to approach and use media. The Church and Gan say that we must enter into the modern day "Areopagus," the social and intellectual hub of ancient Athens where Paul preached to pagans, and use the media tools God has given us to make truth known and serve mankind. Cardinal John Patrick Foley says, "Frankly, I wish that such a book had existed when I was president of the Pontifical Council for Social Communications as a text which I could have recommended. The important thing, however, is that it exists now to provide a text, context, and challenge for those who wish to bring both Christian principles and professional excellence to their work in the media." Gan offers chapter after chapter of real-life experience of how to assess movies, games, and gadgets for you and your teens. Of how to judge the merits of a film like Saving Private Ryan, and what sets it apart from Nightmare on Elm Street. Can the one be acceptable viewing and the other not? Definitely. And Gan details why. Infinite Bandwidth: Encountering Christ in the Media is way out front of the newest gizmo and will stay there thanks to its timeless principles that can be applied in all digital terrain, now and the future. Parents, educators, and students will put this book down with an entirely different attitude about the relationship between faith and media use.




Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices


Book Description

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.