Low-Dimensional Nanoscale Electronic and Photonic Devices 4


Book Description

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Low-Dimensional Nanoscale Electronic and Photonic Devices 4¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.













One-Dimensional Nanoscale Electronic and Photonic Devices 2


Book Description

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿One-Dimensional Nanoscale Electronic and Photonic Devices 2¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.




Effect of Static Electric Fields on The Electronic And Optical Properties of Layered Semiconductor Nanostructures


Book Description

This volume investigates the theory of the effect of static electric fields on one-electron states in. nanocylindrical and nanospherical heterolayers and quantized semiconductor films. Homogeneous external electrostatic field for all these structures has been considered as a "universal" modulating factor. For structures with radial symmetry, a study on the influence of radial static field and the electric field of a charged ring on one-electron states is presented. Chapters focusing on homogeneous field effect on low-dimensional excitonic states in the quantized films and quantum wires - in both wide bandgap and narrowband semiconductors - are also included. Other contents include calculations weak, moderate and strong electric fields, quantum-mechanical approximation and perturbation theory, the quasi-classical approximation (WKB method). Readers will benefit from the varied methodological to the subject which gives them a concrete analytical framework to solve problems related to nanoscale semiconductor design. The reference should prove to be useful to academics and professionals working in semiconductor nanoelectronics research and development.







Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996


Book Description

Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.




Advances in Semiconductor Nanostructures


Book Description

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries




Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting


Book Description

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.