Physics of Strained Quantum Well Lasers


Book Description

When this publisher offered me the opportunity to \\Tite a book, some six years ago, I did not hesitate to say yes. I had just spent the last four years of graduate school struggling to understand the physics of strained quantum well lasers, and it seemed to me the whole experience was much more difficult that it should have been. For although many of the results I needed were easy to locate, the underlying physical premises and intervening steps were not. If only I had a book providing the derivations, I could have absorbed them and gone on my way. Such a book lies before you. It provides a unified and self-contained descrip tion of the essential physics of strained quantum well lasers, starting from first principles whenever feasible. The presentation I have chosen requires only the standard introductory background in quantum mechanics, solid state physics, and electromagnetics expected of entering graduate students in physics or elec trical engineering. A single undergraduate course in each of these subjects should be more than sufficient to follow the text. :'Iore advanced material on quantum mechanics is developed and collected in the first chapter. \Vhen pos sible, I have presented the results in a general setting and have later applied them to specific cases of interest. I find this the most satisfying way to ap proach the subject, and it has the additional benefit of solving many problems once and for all.




Strained-Layer Quantum Wells and Their Applications


Book Description

Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.







Quantum Well Lasers


Book Description

This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist. * The first comprehensive book-length treatment of quantum well lasers * Provides a detailed treatment of quantum well laser basics * Covers strained quantum well lasers * Explores the different state-of-the-art quantum well laser types * Provides key information on future laser technologies




High-Speed Strained Quantum-Well Lasers and Optoelectronic Devices


Book Description

We investigate research issues on strained quantum-well optoelectronic devices and their applications for navy needs. This work studies the fundamental physics in strained quantum-well devices such as Fabry Perot (FP) lasers, distributed feedback (DFB) lasers, and vertical cavity surface emitting lasers (VCSELs) through the development of theory and experiment. Integrated optoelectronic devices are also investigated for applications in wavelength division multiplexed (WDM) fiber optic communications systems such as wavelength tunability and wavelength conversion. In this work, we investigate the following areas: a. Comprehensive characterization of fundamental parameters of strained quantum- well lasers, b. Modeling and experiment of integrated laser/modulator devices, c. Modeling and experiment of VCSELs, d. Wavelength conversion using four-wave mixing and cross-phase/gain/absorption modulation, e. Optical gain theory for GaN-based blue-green quantum-well lasers.




Physics of Quantum Well Devices


Book Description

Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.




Valence Band Structures of a Strained Quantum Well and Applications to Semiconductor Lasers


Book Description

Strain effects in quantum wells have been intensively investigated for applications to semiconductor lasers, photodetectors and electronic devices such as pseudomorphic high electronic mobility transistors. High quantum efficiency, high power (70 mW CW and 180 mW pulsed operation), modulation-doped In0.8Ga0.2As strained-layer (compression) quantum-well lasers emitting at 1.5 um wavelength have been reported. A record high power output (206 mW CW) strained-layer InGaAs/InP quantum-well laser emitting at 1.48 to 1.51 um using the effects of tension strain has been demonstrated. A very low threshold (92 A/cm2) strained-layer quantum-well laser at 1.6 um has also been obtained.




Physics of Photonic Devices


Book Description

The most up-to-date book available on the physics of photonic devices This new edition of Physics of Photonic Devices incorporates significant advancements in the field of photonics that have occurred since publication of the first edition (Physics of Optoelectronic Devices). New topics covered include a brief history of the invention of semiconductor lasers, the Lorentz dipole method and metal plasmas, matrix optics, surface plasma waveguides, optical ring resonators, integrated electroabsorption modulator-lasers, and solar cells. It also introduces exciting new fields of research such as: surface plasmonics and micro-ring resonators; the theory of optical gain and absorption in quantum dots and quantum wires and their applications in semiconductor lasers; and novel microcavity and photonic crystal lasers, quantum-cascade lasers, and GaN blue-green lasers within the context of advanced semiconductor lasers. Physics of Photonic Devices, Second Edition presents novel information that is not yet available in book form elsewhere. Many problem sets have been updated, the answers to which are available in an all-new Solutions Manual for instructors. Comprehensive, timely, and practical, Physics of Photonic Devices is an invaluable textbook for advanced undergraduate and graduate courses in photonics and an indispensable tool for researchers working in this rapidly growing field.







Comprehensive Semiconductor Science and Technology


Book Description

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts