Author : International Conference on Silicon Carbide and Related Materials
Publisher :
Page : 831 pages
File Size : 20,1 MB
Release : 2006
Category :
ISBN :
Author : Robert P. Devaty
Publisher : Trans Tech Publications Ltd
Page : 1670 pages
File Size : 49,39 MB
Release : 2006-10-15
Category : Technology & Engineering
ISBN : 3038130532
Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Author : Robert Philip Devaty
Publisher :
Page : pages
File Size : 33,27 MB
Release : 2006
Category : Crystal growth
ISBN :
Author : Robert P. Devaty
Publisher :
Page : 878 pages
File Size : 44,1 MB
Release : 2006
Category : Science
ISBN :
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.
Author : Roberta Nipoti
Publisher : Trans Tech Publications Ltd
Page : 1148 pages
File Size : 13,98 MB
Release : 2005-05-15
Category : Technology & Engineering
ISBN : 3038130036
Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.
Author :
Publisher :
Page : 868 pages
File Size : 40,34 MB
Release : 2000
Category : Crystal growth
ISBN :
Author : Michael Shur
Publisher : World Scientific
Page : 143 pages
File Size : 45,70 MB
Release : 2007
Category : Science
ISBN : 9812703837
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Author : Hajime Okumura
Publisher : Trans Tech Publications Ltd
Page : 1246 pages
File Size : 48,46 MB
Release : 2014-02-26
Category : Technology & Engineering
ISBN : 3038263915
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.
Author :
Publisher :
Page : pages
File Size : 19,96 MB
Release : 2006
Category :
ISBN :
Author : Calvin H. Carter
Publisher :
Page : 828 pages
File Size : 17,43 MB
Release : 2000
Category :
ISBN :
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina. The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.
