Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS
Author :
Publisher :
Page : 658 pages
File Size : 12,53 MB
Release : 2005
Category : Technology & Engineering
ISBN :
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment
Author : E. P. Gusev
Publisher : The Electrochemical Society
Page : 426 pages
File Size : 37,27 MB
Release : 2010-04
Category : Science
ISBN : 1566777917
Book Description
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2
Author : Fred Roozeboom
Publisher : The Electrochemical Society
Page : 472 pages
File Size : 15,26 MB
Release : 2006
Category : Gate array circuits
ISBN : 1566775027
Book Description
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
Author : V. Narayanan
Publisher : The Electrochemical Society
Page : 367 pages
File Size : 20,20 MB
Release : 2009-05
Category : Gate array circuits
ISBN : 1566777097
Book Description
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment
Author : P. J. Timans
Publisher : The Electrochemical Society
Page : 488 pages
File Size : 33,55 MB
Release : 2008-05
Category : Gate array circuits
ISBN : 1566776260
Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Plasma Processing 17
Author : G. Mathad
Publisher : The Electrochemical Society
Page : 89 pages
File Size : 31,30 MB
Release : 2008-11
Category : Science
ISBN : 1566776651
Book Description
This issue of ECS Transactions contains papers presented at the International Symposium on Plasma Processing. The symposium, 17th in the series, cosponsored by the Dielectric Science & Technology, Electronics, and Photonics Divisions was held as part of the 213th Meeting of The Electrochemical Society, Inc., in Phoenix, AZ, USA, May 18 - 23, 2008. A total of 14 papers were presented from Belgium, Germany, Italy, Japan, Republic of Korea, Russia, and the USA on topics mainly focused on diagnostics & measurements and etching & deposition processes.
Physics and Technology of High-k Gate Dielectrics 4
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 34,80 MB
Release : 2006
Category : Dielectrics
ISBN : 1566775035
Book Description
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Solid State (General) - 214th ECS Meeting/PRiME 2008
Author : J. Weidner
Publisher : The Electrochemical Society
Page : 123 pages
File Size : 24,38 MB
Release : 2009-03
Category : Science
ISBN : 1566777216
Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Solid-State Topics General Session¿, held during the PRiME 2008 joint international meeting of The Electrochemical Society and The Electrochemical Society of Japan, with the technical cosponsorship of the Japan Society of Applied Physics, the Korean Electrochemical Society, the Electrochemistry Division of the Royal Australian Chemical Institute, and the Chinese Society of Electrochemistry. This meeting was held in Honolulu, Hawaii, from October 12 to 17, 2008.
Noise and Fluctuations
Author : Massimo Macucci
Publisher : American Institute of Physics
Page : 692 pages
File Size : 39,35 MB
Release : 2009-05-13
Category : Science
ISBN :
Book Description
The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.
Journal of the Electrochemical Society
Author :
Publisher :
Page : 1020 pages
File Size : 24,23 MB
Release : 2009
Category : Electrochemistry
ISBN :
