Book Description

Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book. Sample Chapter(s). Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires (784 KB). Contents: Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires (D K Ferry et al.); Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors (N Kirova); Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices (S M Goodnick & M Saraniti); Nanoelectronic Device Simulation Based on the Wigner Function Formalism (H Kosina); Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org (S Ahmed et al.); Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions (V T Renard et al.); Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems (S Roy et al.); HEMT-Based Nanometer Devices Toward Terahertz Era (E Sano & T Otsuji); Plasma Waves in Two-Dimensional Electron Systems and Their Applications (V Ryzhii et al.); Resonant Terahertz Detection Antenna Utilizing Plasma Oscillations in Lateral Schottky Diode (A Satou et al.); Terahertz Polarization Controller Based on Electronic Dispersion Control of 2D Plasmons (T Nishimura & T Otsuji); Higher-Order Plasmon Resonances in GaN-Based Field-Effect Transistor Arrays (V V Popov et al.); Ultra-Highly Sensitive Terahertz Detection Using Carbon-Nanotube Quantum Dots (Y Kawano et al.); Generation of Ultrashort Electron Bunches in Nanostructures by Femtosecond Laser Pulses (A Gladun et al.); Characterization of Voltage-Controlled Oscillator Using RTD Transmission Line (K Narahara et al.); Infrared Quantum-Dot Detectors with Diffusion-Limited Capture (N Vagidov et al.); Magnetoresistance in Fe/MgO/Fe Magentic Tunnel Junctions (N N Beleskii et al.); Modeling and Implementation of Spin-Based Quantum Computation (M E Hawley et al.); Quantum Engineering for Threat Reduction and Homeland Security (G P Berman et al.); Strong Phase Shift Mask Manufacturing Error Impact on the 65nm Poly Line Printability (N Belova). Readership: Academics, graduate and postgraduate students in the field of physics and modeling of novel electronics and optoelectronic devices.