Bands and Photons in III-V Semiconductor Quantum Structures


Book Description

This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.




Optical Properties of III–V Semiconductors


Book Description

This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.







Theory of Semiconductor Quantum Dots


Book Description

Semiconductor structures containing zero-dimensional objects — quantum dots — are the subject of intensive research worldwide. This monograph describes a detailed theory of the electronic band structure and optical properties of semiconductor quantum dots.The author provides a comprehensive description of an original approach based on a combination of the Fourier transform, the Green's function and plane-wave expansion techniques in the framework of multiband 8x8 kp theory. The calculated band structure, optical properties and device applications are analyzed in line with available experiments for a large number of realistic quantum dot structures and various combinations of materials, such as InGaN, GaN/AlN, ZnSe, InGaAs (including dots-in-the-well), ZnSe/CdSe, and lead salts.







Survey of Semiconductor Physics, Electrons and Other Particles in Semiconductors


Book Description

A comprehensive treatment of the fundamentals of semiconductor physics and materials science The first edition of the Survey of Semiconductor Physics set the standard for the multifaceted exploration of semiconductor physics. Now, Dr. Karl Böer, one of the world’s leading experts in solid-state physics, with assistance from a team of the fields top researchers, expands this coverage in the Second Edition. Completely updated and substantially expanded, the Survey of Semiconductor Physics, Second Edition covers the basic elements in the entire field of semiconductor physics, emphasizing the materials and surface science involved. The Second Edition uses similar theoretical approaches and analyses for the basic material classes: crystalline, amorphous, quantum structures, and organics. The first volume provides thorough coverage of the structure of semiconductors, including: Phonons Energy bands Photons as they interact with the semiconductor and other particles Defects Generation and recombination Kinetics In both volumes, extensive appendices simplify searches for important formulae and tables. An elaborate word index and reference listings allow readers to use the reference in multiple ways to discover expanding literature; to explore similarities and connecting principles in other fields; to find out how others in adjacent fields came up with intriguing solutions to similar problems; and to obtain a broad overview of the entire field of semiconductor physics.




Photonic Band Gap Materials


Book Description

Photonic band gap crystals offer unique ways to tailor light and the propagation of electromagnetic waves. In analogy to electrons in a crystal, EM waves propagating in a structure with a periodically-modulated dielectric constant are organized into photonic bands separated by gaps in which propagating states are forbidden. Proposed applications of such photonic band gap crystals, operating at frequencies from microwave to optical, include zero- threshold lasers, low-loss resonators and cavities, and efficient microwave antennas. Spontaneous emission is suppressed for photons in the photonic band gap, offering novel approaches to manipulating the EM field and creating high-efficiency light-emitting structures. Photonic Band Gap Materials identifies three most promising areas of research. The first is materials fabrication, involving the creation of high quality, low loss, periodic dielectric structures. The smallest photonic crystals yet fabricated have been made by machining Si wafers along (110), and some have lattice constants as small as 500 microns. The second area is in applications. Possible applications presented are microwave mirrors, directional antennas, resonators (especially in the 2 GHz region), filters, waveguides, Y splitters, and resonant microcavities. The third area covers fundamentally new physical phenomena in condensed matter physics and quantum optics. An excellent review of recent development, covering theoretical, experimental and applied aspects. Interesting and stimulating reading for active researchers, as well as a useful reference for non-specialists.







Quantum Photonics


Book Description

This textbook employs a pedagogical approach that facilitates access to the fundamentals of Quantum Photonics. It contains an introductory description of the quantum properties of photons through the second quantization of the electromagnetic field, introducing stimulated and spontaneous emission of photons at the quantum level. Schrödinger’s equation is used to describe the behavior of electrons in a one-dimensional potential. Tunneling through a barrier is used to introduce the concept of nonlocality of an electron at the quantum level, which is closely-related to quantum confinement tunneling, resonant tunneling, and the origin of energy bands in both periodic (crystalline) and aperiodic (non-crystalline) materials. Introducing the concepts of reciprocal space, Brillouin zones, and Bloch’s theorem, the determination of electronic band structure using the pseudopotential method is presented, allowing direct computation of the band structures of most group IV, group III-V, and group II-VI semiconductors. The text is supported by numerous numerical calculations that can be repeated by the student. The book includes an extensive treatment of the time duration of tunneling. The non-local nature of quantum mechanical states is further developed by the proof of Bell’s theorem and an in-depth discussion of its implications for experimental phenomena like quantum tunneling and quantum entanglement. The entangled quantum photon pair is the workhorse for exploring the fundamental non-locality of quantum mechanics, as well as important applications such as quantum cryptography. Further, the book presents the generation of entangled photon pairs by spontaneous parametric downconversion in detail using operators of the quantized photonic field. The physics of laser action is presented using the quantum photonic basis of spontaneous and stimulated emission, highlighting the limits of Maxwell’s equations in describing quantum behavior. Further, the book shows how the quantum confinement of electrons leads to reduced threshold current on the macroscopic level. Quantum cascade and interband cascade laser structures are analyzed using methods developed in earlier chapters to show how band structure engineering can be applied to access photon emission energies that cannot be achieved using conventional materials.




Semiconductor Quantum Structures for Ultraviolet-to-infrared Multi-band Radiation Detection


Book Description

In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at