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Capacitance Spectroscopy of Semiconductors

Author : Jian V. Li

Publisher : CRC Press

Page : 300 pages

File Size : 48,95 MB

Release : 2018-07-06

Category : Science

ISBN : 1351368443

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Book Description

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.



Capacitance Spectroscopy of Semiconductors

Author : Jian V. Li

Publisher : Pan Stanford

Page : 0 pages

File Size : 19,4 MB

Release : 2018

Category : Science

ISBN : 9781315150130

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Book Description

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.



Capacitance Spectroscopy of Semiconductors

Author : Jian V. Li

Publisher : CRC Press

Page : 461 pages

File Size : 24,53 MB

Release : 2018-07-06

Category : Science

ISBN : 1351368451

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Book Description

Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.



Perovskite Photovoltaics and Optoelectronics

Author : Tsutomu Miyasaka

Publisher : John Wiley & Sons

Page : 484 pages

File Size : 13,50 MB

Release : 2022-03-21

Category : Technology & Engineering

ISBN : 3527347488

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Book Description

Perovskite Photovoltaics and Optoelectronics Discover a one-of-a-kind treatment of perovskite photovoltaics In less than a decade, the photovoltaics of organic-inorganic halide perovskite materials has surpassed the efficiency of semiconductor compounds like CdTe and CIGS in solar cells. In Perovskite Photovoltaics and Optoelectronics: From Fundamentals to Advanced Applications, distinguished engineer Dr. Tsutomu Miyasaka delivers a comprehensive exploration of foundational and advanced topics regarding halide perovskites. It summarizes the latest information and discussion in the field, from fundamental theory and materials to critical device applications. With contributions by top scientists working in the perovskite community, the accomplished editor has compiled a resource of central importance for researchers working on perovskite related materials and devices. This edited volume includes coverage of new materials and their commercial and market potential in areas like perovskite solar cells, perovskite light-emitting diodes (LEDs), and perovskite-based photodetectors. It also includes: A thorough introduction to halide perovskite materials, their synthesis, and dimension control Comprehensive explorations of the photovoltaics of halide perovskites and their historical background Practical discussions of solid-state photophysics and carrier transfer mechanisms in halide perovskite semiconductors In-depth examinations of multi-cation anion-based high efficiency perovskite solar cells Perfect for materials scientists, crystallization physicists, surface chemists, and solid-state physicists, Perovskite Photovoltaics and Optoelectronics: From Fundamentals to Advanced Applications is also an indispensable resource for solid state chemists and device/electronics engineers.



Extended Defects in Semiconductors

Author : D. B. Holt

Publisher : Cambridge University Press

Page : 625 pages

File Size : 23,34 MB

Release : 2007-04-12

Category : Science

ISBN : 1139463594

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Book Description

A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.



Semiconductor Nanowires

Author : J Arbiol

Publisher : Elsevier

Page : 573 pages

File Size : 35,52 MB

Release : 2015-03-31

Category : Technology & Engineering

ISBN : 1782422633

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Book Description

Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields



Characterization of Semiconductor Heterostructures and Nanostructures

Author : Giovanni Agostini

Publisher : Elsevier

Page : 501 pages

File Size : 25,79 MB

Release : 2011-08-11

Category : Science

ISBN : 0080558151

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Book Description

In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors



Semiconductor Material and Device Characterization

Author : Dieter K. Schroder

Publisher : John Wiley & Sons

Page : 800 pages

File Size : 11,19 MB

Release : 2015-06-29

Category : Technology & Engineering

ISBN : 0471739065

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Book Description

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.



Semiconductor Detector Systems

Author : Helmuth Spieler

Publisher : OUP Oxford

Page : 513 pages

File Size : 44,64 MB

Release : 2005-08-25

Category : Technology & Engineering

ISBN : 0191523658

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Book Description

Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.



Identification of Defects in Semiconductors

Author :

Publisher : Academic Press

Page : 449 pages

File Size : 37,71 MB

Release : 1998-10-27

Category : Science

ISBN : 008086449X

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Book Description

GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.