Compound semiconductors. 1. Preparation of III-V compounds
Author : Robert K. Willardson
Publisher :
Page : 553 pages
File Size : 13,32 MB
Release : 1962
Category : Semiconductors
ISBN :
Author : Robert K. Willardson
Publisher :
Page : 553 pages
File Size : 13,32 MB
Release : 1962
Category : Semiconductors
ISBN :
Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 32,71 MB
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 3030519031
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
Page : 472 pages
File Size : 15,30 MB
Release : 2013-06-29
Category : Science
ISBN : 1468448358
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : Robert K. Willardson
Publisher :
Page : pages
File Size : 29,63 MB
Release : 1962
Category :
ISBN :
Author : Anthony C. Jones
Publisher : John Wiley & Sons
Page : 352 pages
File Size : 31,97 MB
Release : 2008-11-20
Category : Science
ISBN : 3527614621
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Author : Robert K. Willardson
Publisher :
Page : 586 pages
File Size : 41,51 MB
Release : 1962
Category : Semiconductors
ISBN :
Author : Robert K. Willardson
Publisher :
Page : 553 pages
File Size : 39,24 MB
Release : 1962
Category :
ISBN :
Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 50,88 MB
Release : 1992-11-10
Category : Science
ISBN : 9780471573296
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Author :
Publisher : Elsevier
Page : 333 pages
File Size : 16,80 MB
Release : 2001-10-20
Category : Science
ISBN : 0080541011
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Author : Tingkai Li
Publisher : CRC Press
Page : 588 pages
File Size : 13,28 MB
Release : 2016-04-19
Category : Science
ISBN : 1439815232
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more