Indium Phosphide and Related Materials


Book Description

Presents an integrated survey of the most recent research, engineering development and commercial application of indium phosphide and related materials. The book is tutorial in nature, rich in application-engineering detail and emphasizes the designing and implementing of practical devices.




Studies of Schottky Contacts on Indium Phosphide


Book Description

Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.










Semiconductor Material and Device Characterization


Book Description

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.