Imperfections in Crystalline Solids


Book Description

An accessible textbook providing students with a working knowledge of the properties of defects in crystals, in a step-by-step tutorial style.




Crystallography and Crystal Defects


Book Description

Extensively revised and updated, this new edition of a classic text presents a unified approach to crystallography and to the defects found within crystals. The book combines the classical and exact description of symmetry of a perfect crystal with the possible geometries of the major defects-dislocations, stacking faults, point defects, twins, interfaces and the effects of martensitic transformations. A number of important concepts and exciting new topics have been introduced in this second edition, including piezoelectricity, liquid crystals, nanocrystalline concepts, incommensurate materials and the structure of foamed and amorphous solids. The coverage of quasicrystalline materials has been extended, and the data tables, appendices and references have been fully updated. Reinforcing its unrivalled position as the core text for teaching crystallography and crystal defects, each chapter includes problem sets with brief numerical solutions at the end of the book. Detailed worked solutions, supplementary lecture material and computer programs for crystallographic calculations are provided online (http://booksupport.wiley.com).







Crystal Defects and Crystalline Interfaces


Book Description

It is nonnal for the preface to explain the motivation behind the writing of the book. Since many good books dealing with the general theory of crystal defects already exist, a new book has to be especially justified, and here its main justification lies in its treatment of crystal line interfaces. About 1961, the work of the author, essentially based on the fundamental work of Professor F. C. Frank, started to branch away from the main flow of thought in this field and eventually led to a general geometrical theory which is presented as a whole for the first time in this book. Although nearly all that is presented has already been published in different journals and symposia, it might be difficult for the reader to follow that literature, as a new terminology and new methods of analysis had to be developed. Special emphasis is given to discussion and many diagrams are included in order that a clear view of the basic concepts be obtained. Intennediate summaries try to bring out the main points of the chapters. Instead of specific exercises, general suggestions for them are given. The part up to chapter 9 is considered more or less as introductory, so that the book can be studied without specific knowledge of crystals and crystal defects. The presentation of that part developed out of lectures given by the author at the Swiss Federal Institute of Technology (ETH) in Zurich.




Defects and Impurities in Silicon Materials


Book Description

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.