Defect Recognition and Image Processing in III-V Compounds, II
Author : Eicke R. Weber
Publisher : Elsevier Publishing Company
Page : 358 pages
File Size : 23,6 MB
Release : 1987
Category : Computers
ISBN :
Author : Eicke R. Weber
Publisher : Elsevier Publishing Company
Page : 358 pages
File Size : 23,6 MB
Release : 1987
Category : Computers
ISBN :
Author : J. P. Fillard
Publisher : Elsevier Publishing Company
Page : 326 pages
File Size : 28,73 MB
Release : 1985
Category : Technology & Engineering
ISBN :
Author : J. Doneker
Publisher : Routledge
Page : 552 pages
File Size : 27,60 MB
Release : 2017-11-22
Category : Science
ISBN : 1351456466
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Author : Chr. Boller
Publisher : Elsevier
Page : 208 pages
File Size : 11,14 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 1483193217
Materials Data for Cyclic Loading, Part E: Cast and Welded Metals discusses the various criteria for the efficient selection of cast and welded metals. The book provides the comparison of various data to indicate strength of materials under variable amplitude loading. The presented data in the text include the chemical composition, monotonic properties, cyclic properties, and failure criterion. The book also provides the monotonic and cyclic test results of the materials. The date sheet also illustrates the diagram for strain-stress curves and strain life curve along with the stress- and strain-controlled constant amplitude tests. The text will be useful to researchers and practitioners of engineering, metallurgy, and physics.
Author : M. Bílý
Publisher : Elsevier
Page : 387 pages
File Size : 37,4 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 1483291715
An integral review is given in this book on the fatigue phenomenon covering the fundamentals of fatigue damage initiation, relevant factors influencing fatigue crack propagation and fatigue life, random load analysis, and simulation for theoretical and experimental fatigue life assessment. The entire chain of problems related to fatigue of metals and structural components is covered. Specifically, it describes the low-cycle plastic properties and statistically interprets the material stress reaction, examining original results of investigations on inelastic deformations under high cycle cyclic loading and correlating them with a number of use parameters. The limit states of bodies with primary defects and their resistance to fatigue crack propagation are discussed. Measurements, analysis and real-time modelling of operating loads for experimental fatigue life verification are reviewed as well as introducing some new fatigue damage accumulation hypotheses based on dissipated energy. Various operating and environmental factors of the fatigue life are analyzed, including temperature, metal structures, corrosive environment, stress-strain amplitudes and their changes, random load (strain) properties, stress gradient frequency, mean level, etc. The work is intended for all those involved in research and development in the metal, machine and structure fields.
Author : L.F Pau
Publisher : Springer Science & Business Media
Page : 324 pages
File Size : 48,54 MB
Release : 2012-12-06
Category : Computers
ISBN : 1461305071
DEFECT PROPORTION OF DETECTION INITIAL RATE DETECTION RATE INSPECTOR 3 COMPLEXITY OF TIMES PAN OF PERFORMING o~ ________________________ o~ ______________________ __ -;. INSPECTION TASK -;. VISUAL INSPECTION Fagure 1. Trends in relations between the complexity of inspection tasks, defect detection rates (absolute and relative), and inspection time. Irrespective of the necessities described above, and with the excep tion of specific generic application systems (e.g., bare-board PCB inspection, wafer inspection, solder joint inspection, linewidth measure ment), vision systems are still not found frequently in today's electronics factories. Besides cost, some major reasons for this absence are: 1. The detection robustness or accuracy is still insufficient. 2. The total inspection time is often too high, although this can frequently be attributed to mechanical handling or sensing. 3. There are persistent gaps among process engineers, CAD en gineers, manufacturing engineers, test specialists, and computer vision specialists, as problems dominate the day-to-day interac tions and prevent the establishment of trust. 4. Computer vision specialists sometimes still believe that their contributions are universal, so that adaptation to each real problem becomes tedious, or stumbles over the insufficient availabIlity of multidisciplinary expertise. Whether we like it or not, we must still use appropriate sensors, lighting, and combina tions of algorithms for each class of applications; likewise, we cannot design mechanical handling, illumination, and sensing in isolation from each other.
Author : B.G. Yacobi
Publisher : Springer Science & Business Media
Page : 294 pages
File Size : 15,67 MB
Release : 2013-06-29
Category : Science
ISBN : 1475795955
Microcharacterization of materials is a rapidly advancing field. Among the many electron and ion probe techniques, the cathodoluminescence mode of an electron probe instrument has reached a certain maturity, which is reflected by an increas ing number of publications in this field. The rapid rate of progress in applications of cathodoluminescence techniques in characterizing inorganic solids has been especially noticeable in recent years. The main purpose of the book is to outline the applications of cath odoluminescence techniques in the assessment of optical and electronic proper ties of inorganic solids, such as semiconductors, phosphors, ceramics, and min erals. The assessment provides, for example, information on impurity levels derived from cathodoluminescence spectroscopy, analysis of dopant concentra tions at a level that, in some cases, is several orders of magnitude lower than that attainable by x-ray microanalysis, the mapping of defects, and the determination of carrier lifetimes and the charge carrier capture cross sections of impurities. In order to make the book self-contained, some basic concepts of solid-state phys ics, as well as various cathodoluminescence techniques and the processes leading to luminescence phenomena in inorganic solids, are also described. We hope that this book will be useful to both scientists and graduate students interested in microcharacterization of inorganic solids. This book, however, was not intended as a definitive account of cathodoluminescence analysis of in organic solids. In considering the results presented here, readers should re member that many materials have properties that vary widely as a function of preparation conditions.
Author : M. C. R. Symons
Publisher : Royal Society of Chemistry
Page : 312 pages
File Size : 29,15 MB
Release : 1989
Category : Medical
ISBN : 0851868711
Specialist Periodical Reports provide systematic and detailed review coverage of progress in the major areas of chemical research. Written by experts in their specialist fields the series creates a unique service for the active research chemist, supplying regular critical in-depth accounts of progress in particular areas of chemistry. For over 80 years the Royal Society of Chemistry and its predecessor, the Chemical Society, have been publishing reports charting developments in chemistry, which originally took the form of Annual Reports. However, by 1967 the whole spectrum of chemistry could no longer be contained within one volume and the series Specialist Periodical Reports was born. The Annual Reports themselves still existed but were divided into two, and subsequently three, volumes covering Inorganic, Organic and Physical Chemistry. For more general coverage of the highlights in chemistry they remain a 'must'. Since that time the SPR series has altered according to the fluctuating degree of activity in various fields of chemistry. Some titles have remained unchanged, while others have altered their emphasis along with their titles; some have been combined under a new name whereas others have had to be discontinued. The current list of Specialist Periodical Reports can be seen on the inside flap of this volume.
Author : Bernd O. Kolbesen
Publisher : The Electrochemical Society
Page : 380 pages
File Size : 22,96 MB
Release : 1995
Category : Technology & Engineering
ISBN : 9781566771221
Author : A.G. Cullis
Publisher : CRC Press
Page : 626 pages
File Size : 24,51 MB
Release : 2018-01-18
Category : Science
ISBN : 1351083074
The Institute of Physics Conference Series is a leading International medium for the rapid publication of proceedings of major conferences and symposia reviewing new developments in physics and related areas. Volumes in the series comprise original refereed papers and are regarded as standard referee works. As such, they are an essential part of major libration collections worldwide. The twelfth conference on the Microscopy of Semiconducting Materials (MSM) was held at the University of Oxford, 25-29 March 2001. MSM conferences focus on recent international advances in semiconductor studies carried out by all forms of microscopy. The event was organized with scientific sponsorship by the Royal Microscopical Society, The Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. With the continual shrinking of electronic device dimensions and accompanying enhancement in device performance, the understanding of semiconductor microscopic properties at the nanoscale (and even at the atomic scale) is increasingly critical for further progress to be achieved. This conference proceedings provides an overview of the latest instrumentation, analysis techniques and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and materials scientists.