Dissertation Abstracts International
Author :
Publisher :
Page : 820 pages
File Size : 11,84 MB
Release : 2004
Category : Dissertations, Academic
ISBN :
Author :
Publisher :
Page : 820 pages
File Size : 11,84 MB
Release : 2004
Category : Dissertations, Academic
ISBN :
Author : Guilei Wang
Publisher : Springer Nature
Page : 127 pages
File Size : 17,91 MB
Release : 2019-09-20
Category : Technology & Engineering
ISBN : 9811500460
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Author : Ahmet Bindal
Publisher : Springer
Page : 176 pages
File Size : 12,17 MB
Release : 2016-02-23
Category : Technology & Engineering
ISBN : 3319271776
This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.
Author : Katayun Barmak
Publisher : Woodhead Publishing
Page : 671 pages
File Size : 11,64 MB
Release : 2014-02-13
Category : Technology & Engineering
ISBN : 085709629X
Metallic films play an important role in modern technologies such as integrated circuits, information storage, displays, sensors, and coatings. Metallic Films for Electronic, Optical and Magnetic Applications reviews the structure, processing and properties of metallic films. Part one explores the structure of metallic films using characterization methods such as x-ray diffraction and transmission electron microscopy. This part also encompasses the processing of metallic films, including structure formation during deposition and post-deposition reactions and phase transformations. Chapters in part two focus on the properties of metallic films, including mechanical, electrical, magnetic, optical, and thermal properties. Metallic Films for Electronic, Optical and Magnetic Applications is a technical resource for electronics components manufacturers, scientists, and engineers working in the semiconductor industry, product developers of sensors, displays, and other optoelectronic devices, and academics working in the field. - Explores the structure of metallic films using characterization methods such as x-ray diffraction and transmission electron microscopy - Discusses processing of metallic films, including structure formation during deposition and post-deposition reactions and phase transformations - Focuses on the properties of metallic films, including mechanical, electrical, magnetic, optical, and thermal properties
Author : C.K Maiti
Publisher : CRC Press
Page : 438 pages
File Size : 50,34 MB
Release : 2007-01-11
Category : Science
ISBN : 1420012347
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Author : Yosi Shacham-Diamand
Publisher : Springer Science & Business Media
Page : 545 pages
File Size : 43,94 MB
Release : 2009-09-19
Category : Science
ISBN : 0387958681
In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.
Author : Cor Claeys
Publisher : Elsevier
Page : 476 pages
File Size : 37,56 MB
Release : 2011-07-28
Category : Science
ISBN : 008047490X
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
Author : Federico Capasso
Publisher : North Holland
Page : 670 pages
File Size : 12,5 MB
Release : 1987
Category : Science
ISBN :
Now also available in paperback is a work which provides the first comprehensive overview of the results obtained after the 1970s. A thorough description is given of the properties of semiconductor heterojunctions, and their applications in novel devices. Particular emphasis is given to the interface band discontinuities. Written by top experts in the field this book will be welcomed by engineers, physicists and students interested in modern microelectronics.
Author : J. M. Poate
Publisher :
Page : 584 pages
File Size : 23,92 MB
Release : 1982
Category : Technology & Engineering
ISBN :
Author : Erich Kasper
Publisher : Institution of Electrical Engineers
Page : 0 pages
File Size : 18,86 MB
Release : 1995
Category : Germanium alloys
ISBN : 9780852968260
This volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.