Author : Eric Garfunkel
Publisher : Springer Science & Business Media
Page : 503 pages
File Size : 50,94 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9401150087
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Author : Gianfranco Pacchioni
Publisher : Springer Science & Business Media
Page : 619 pages
File Size : 25,70 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9401009449
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author : Yves J. Chabal
Publisher : Springer Science & Business Media
Page : 269 pages
File Size : 29,89 MB
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 3642567118
Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Author : Howard R. Huff
Publisher : The Electrochemical Society
Page : 599 pages
File Size : 32,8 MB
Release : 2006
Category : Semiconductors
ISBN : 156677439X
This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
Author : Alain C. Diebold
Publisher : CRC Press
Page : 703 pages
File Size : 43,87 MB
Release : 2001-06-29
Category : Technology & Engineering
ISBN : 0203904540
Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
Author : Evgeni Gusev
Publisher : Springer Science & Business Media
Page : 495 pages
File Size : 17,87 MB
Release : 2006-02-15
Category : Technology & Engineering
ISBN : 1402043678
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Author : Hari Singh Nalwa
Publisher : Elsevier
Page : 3436 pages
File Size : 37,73 MB
Release : 2001-11-17
Category : Technology & Engineering
ISBN : 0080533248
This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures.Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices.Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Author : Michael Brian Ives
Publisher : The Electrochemical Society
Page : 1000 pages
File Size : 44,99 MB
Release : 2001
Category : Science
ISBN : 9781566773041
Author : Hisham Z. Massoud
Publisher :
Page : 562 pages
File Size : 47,68 MB
Release : 2000
Category : Nature
ISBN :
Author : Howard R. Huff
Publisher : The Electrochemical Society
Page : 650 pages
File Size : 16,99 MB
Release : 2002
Category : Science
ISBN : 9781566773744
