Book Description

The basic material, optical and electrical properties of the films were studied to build a knowledge resource on this new material. For comparison and to deepen the understanding of the nature of the alloy, pure Ge films were grown with similar parameters to the Ge[Subscript 1-x]C[Subscript x] alloy films. The films are characterized by UV/VIS/NIR Spectroscopy, Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, four point probe conductivity and Hall mobility measurements. The second stage of the research was to dope the material n and p type and to determine the affect on the electrical properties. The final stage was to use the knowledge obtained from the above work to develop novel multi-layer structures that optimize the desirable material properties and to develop a 'proof of concept' diode in the crystalline Ge[Subscript 1-x]C[Subscript x] material, which was the first microelectronic device fabricated in this material.