III-V Ternary Semiconducting Compounds-Data Tables


Book Description

Gallium-Aluminum-Antimony System.- Gallium-Aluminum-Arsenic System.- Gallium-Aluminum-Phosphorous System.- Gallium-Arsenic-Antimony System.- Gallium-Arsenic-Phosphorous System.- Gallium-Indium-Antimony System.- Gallium-Indium-Arsenic System.- Gallium-Indium-Phosphorous System.- Indium-Arsenic-Antimony System.- Indium-Arsenic-Phosphorous System.




Handbook for III-V High Electron Mobility Transistor Technologies


Book Description

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots




III–V Compound Semiconductors and Devices


Book Description

This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.







III-V Ternary Semiconducting Compounds-Data Tables


Book Description

The Electronic Prope~ties Information Cente~ has developed the Data Table as a compilation of the most ~eliable info~mation available fo~ the physical, c~ystallog~aphic, mechanical, thermal, elect~onic, magnetic and optical p~ope~ties of a given mate~ial. Data Tables forme~ly se~ved as an int~oduction to the g~aphic data compilations on the mate~ial published by the Elect~onic ~ope~ties Information Cente~, EPIC, as Data Sheets. Although the Data Sheets we~e p~incipally concerned, according to the scope of the Cente~, with electronic and optical data, it is believed that data cove~ing the complete p~ope~ty spect~um, is of the f~st impo~tance to eve~y scientist and engineer, whateve~ his information requi~ements. The enthusiastic ~eception of these Data Tables has confi~med this opinion and increasing requests fo~ this highly selective type of information ~esulted in the publication of volume 2 in this se~ies, "III-V Semiconducting Compounds" in 1971 and "G~oup IV Semiconducting Compounds", also in 1971. Recent inte~est in the device applications of the te~n~y semiconducto~s, led to the compilation of these Data Tables on the III-V Te~n~y Semiconducting Compounds. The majo~ problem in this type of selective data compilation on a semiconducting mate~ial, lies in the mate~ial specifications. Prope~ties may va~y so widely with doping, c~stallinity, defects, geometric forms and the othe~ pa~amete~s of p~epa~ation, that any attempts at comparison normally fail. On this basis, we have consistently attempted to give the p~epa~ation methods, ca~rier concent~ations, and physical form.




Physical Properties of III-V Semiconductor Compounds


Book Description

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.




Comprehensive Semiconductor Science and Technology


Book Description

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts




Semiconductor Nanostructures for Optoelectronic Applications


Book Description

Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.




Annual Review of Materials Science


Book Description

Provides abstracts and full text to articles on materials science.




Springer Handbook of Crystal Growth


Book Description

Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.