Localization and Metal-Insulator Transitions


Book Description

This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday. Sir Nevill has set the highest standards as a physicist, teacher, and scientific leader. Our feelings for him include not only the respect and admiration due a great scientist, but also a deep affection for a great human being, who possesses a rare combination of outstanding personal qualities. We thank him for enriching our lives, and we shall forever carry cherished memories of this noble man. Scientists best express their thanks by contributing their thoughts and observations to a Festschrift. This one honoring Sir Nevill fills three volumes, with literally hundreds of authors meeting a strict deadline. The fact that contributions poured in from all parts of the world attests to the international cohesion of our scientific community. It is a tribute to Sir Nevill's stand for peace and understanding, transcending national borders. The editors wish to express their gratitude to Ghazaleh Koefod for her diligence and expertise in deciphering and typing many of the papers, as well as helping in numerous other ways. The blame for the errors that remain belongs to the editors.




Localization, Interaction, and Transport Phenomena


Book Description

When we first had the idea of organizing the International Conference on Localization, Interaction, and Transport Phenomena in Impure Metals we expected to bring together at most a hundred physicists. The fact that more than a hundred and fifty participated clearly shows that the topic of the meeting was of great interest to an important fraction of the solid state physics community. In fact, remembering that the localization problem is already a quarter of a century old, it is quite amazing to see how, during the last five years, new and very successful theoretical models emerged which were confirmed by sometimes ingenious experiments. The number of groups involved in the study of localization or related problems in the transport properties of matter even seems to be increasing. The main purpose of this conference was to review the present status of activities in the localization field and hopefully to stimulate new ideas. A study of the Conference Proceedings ascertains that we were successful in reaching these two goals. Moreover, the presence of the authors of the about ninety contributed papers published in the supplement volume assured the very lively atmosphere which characterizes successful conferences. We think that this was the most important ingredient for achieving the second goal in particular. We thank our sponsors for their support, which was given unreluctantly and generously. Especially, we gratefully acknowledge the hospitality of the PTB and the city of Braunschweig during the time of the meeting.




Electron-Electron Interactions in Disordered Systems


Book Description

``Electron-Electron Interactions in Disordered Systems'' deals with the interplay of disorder and the Coulomb interaction. Prominent experts give state-of-the-art reviews of the theoretical and experimental work in this field and make it clear that the interplay of the two effects is essential, especially in low-dimensional systems.




Physics Briefs


Book Description




Electronic Quantum Transport in Mesoscopic Semiconductor Structures


Book Description

Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.




Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)


Book Description

These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.




Confined Electrons and Photons


Book Description

The optical properties of semiconductors have played an important role since the identification of semiconductors as "small" bandgap materials in the thinies, due both to their fundamental interest as a class of solids baving specific optical propenies and to their many important applications. On the former aspect we can cite the fundamental edge absorption and its assignment to direct or indirect transitions, many-body effects as revealed by exciton formation and photoconductivity. On the latter aspect, large-scale applications sucb as LEDs and lasers, photovoltaic converters, photodetectors, electro-optics and non-linear optic devices, come to mind. The eighties saw a revitalization of the whole field due to the advent of heterostructures of lower-dimensionality, mainly two-dimensional quantum wells, which through their enhanced photon-matter interaction yielded new devices with unsurpassed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamental physics.




Perspectives in Quantum Hall Effects


Book Description

The discovery of the quantized and fractional Quantum Hall Effect phenomena is among the most important physics findings in the latter half of this century. The precise quantization of the electrical resistance involved in the quantized Hall effect phenomena has led to the new definition of the resistance standard and has metrologically affected all of science and technology. This resource consists of contributions from the top researchers in the field who present recent experimental and theoretical developments. Each chapter is self-contained and includes its own set of references guiding readers to original papers and further reading on the topic.