Author : Patrick W. DeHaven
Publisher :
Page : 336 pages
File Size : 28,85 MB
Release : 2002-08-02
Category : Computers
ISBN :
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Patrick W. DeHaven
Publisher : Cambridge University Press
Page : 326 pages
File Size : 24,96 MB
Release : 2014-06-05
Category : Technology & Engineering
ISBN : 9781107411906
This book, first published in 2002, provides an interdisciplinary discussion of magnetic and electronic films and the importance of new materials in magnetic data storage is underlined by the accelerating pace of areal density growth. It covers a wide range of novel materials with data- storage potential. In particular, new work on lithographically-defined nanostructures and nanowires shows exciting possibilities for the future, including patterned media and magnetic logic operations. New work on chemical methods to produce ferromagnetic particles less than 10nm in diameter, with extremely narrow size distributions, indicates promise. Presentations also reflect the growing interest in textural and microstructural control in thin-film technology. Materials systems in which links between crystallographic texture, microstructure and properties are studied including metal films, electronic films including ferroelectrics, and transparent conducting oxides. Presentations display a significant variation in the sophistication of texture-measurement techniques, depending on application and equipment availability. The technique of electron backscatter diffraction (EBSD is strongly featured.
Author : Shufeng Zhang
Publisher :
Page : 306 pages
File Size : 30,25 MB
Release : 2003-04
Category : Technology & Engineering
ISBN :
This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.
Author : B. D. Weaver
Publisher :
Page : 712 pages
File Size : 18,47 MB
Release : 2003-04-16
Category : Technology & Engineering
ISBN :
Recent years have witnessed dramatic success in the development of semiconductor materials and related quantum structures for applications in electronics and optoelectronics. Progress has also been made in manufacturable (low cost, high volume) growth and processing of semiconductor materials for such device structures. Novel approaches have been proposed to integrate compound semiconductor devices with conventional silicon processing. This book provides a comprehensive overview of the progress on growth, properties and processing of semiconductor materials and quantum structures, as well to underscore the progress on devices such as transistors, light sources, detectors and modulators. Brought to maturity, these devices will likely see widespread application in infrared imaging, chemical and biological sensing, surveillance, short links, space-based applications, solar cells, high-bandwidth communications, and more. Topics include: electronic devices; Si/Ge devices and technology; zinc oxide and related compounds; emitters, lasers and photovoltaics; nanostructures; innovative materials and devices; detectors; and III-nitride materials and devices.
Author : Mark I. Gardner
Publisher :
Page : 408 pages
File Size : 13,89 MB
Release : 2003-03-25
Category : Computers
ISBN :
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Author : M. Á. Alario-Franco
Publisher :
Page : 512 pages
File Size : 47,81 MB
Release : 2003-08-14
Category : Science
ISBN :
Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.
Author :
Publisher :
Page : 432 pages
File Size : 20,38 MB
Release : 2002
Category : Semiconductors
ISBN :
Author : T. M. Orlando
Publisher :
Page : 320 pages
File Size : 10,44 MB
Release : 2003-06-13
Category : Technology & Engineering
ISBN :
Advances in nanoscale materials processing are taking place at a rapid pace via myriad paths, including lithography, production of nanoparticle assemblies, surface manipulation and many others. Several of the techniques create structures that are three-dimensional or quasi three-dimensional. Even smaller structures intended to be two-dimensional have a 'more' three-dimensional geometry as their two-dimensional feature size and layer thickness become similar. The properties of these denser assemblies are driving different applications in electronics (single-electron devices), optics (photonic crystals and switches) and elsewhere. This 2003 book provides a venue for a productive scientific and technical exchange. The result is a compilation of papers which address fundamental studies, technological advances and novel approaches to developing and processing three-dimensional nanoscale assemblies. Topics include: nanofabrication via lithographic techniques; unconventional fabrication methods of nano-structures; physics, chemistry and modeling of nanostructures; fabrication and properties of 1D nanostructures; fabrication and properties of 3D nanostructures; applications of nanostructures and devices.
Author : D. G. Schlom
Publisher :
Page : 408 pages
File Size : 28,18 MB
Release : 2003-06-23
Category : Technology & Engineering
ISBN :
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
Author : Janice L. Veteran
Publisher :
Page : 704 pages
File Size : 41,21 MB
Release : 2002-10-11
Category : Science
ISBN :
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
