Mechanisms of Radiation Effects in Electronic Materials
Author : V. A. J. Van Lint
Publisher : John Wiley & Sons
Page : 392 pages
File Size : 12,81 MB
Release : 1980
Category : Science
ISBN :
Author : V. A. J. Van Lint
Publisher : John Wiley & Sons
Page : 392 pages
File Size : 12,81 MB
Release : 1980
Category : Science
ISBN :
Author :
Publisher :
Page : 359 pages
File Size : 39,30 MB
Release : 1980
Category : Electronics
ISBN : 9780471041061
Author : C. Claeys
Publisher : Springer Science & Business Media
Page : 424 pages
File Size : 20,76 MB
Release : 2013-11-11
Category : Science
ISBN : 3662049740
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author : Marta Bagatin
Publisher : CRC Press
Page : 410 pages
File Size : 26,1 MB
Release : 2018-09-03
Category : Technology & Engineering
ISBN : 1498722636
Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Author : Milton Ohring
Publisher : Academic Press
Page : 759 pages
File Size : 31,75 MB
Release : 2014-10-14
Category : Technology & Engineering
ISBN : 0080575528
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Author : National Academies of Sciences, Engineering, and Medicine
Publisher : National Academies Press
Page : 89 pages
File Size : 33,96 MB
Release : 2018-06-08
Category : Science
ISBN : 030947082X
Spacecraft depend on electronic components that must perform reliably over missions measured in years and decades. Space radiation is a primary source of degradation, reliability issues, and potentially failure for these electronic components. Although simulation and modeling are valuable for understanding the radiation risk to microelectronics, there is no substitute for testing, and an increased use of commercial-off-the- shelf parts in spacecraft may actually increase requirements for testing, as opposed to simulation and modeling. Testing at the Speed of Light evaluates the nation's current capabilities and future needs for testing the effects of space radiation on microelectronics to ensure mission success and makes recommendations on how to provide effective stewardship of the necessary radiation test infrastructure for the foreseeable future.
Author : Allan H Johnston
Publisher : World Scientific
Page : 376 pages
File Size : 19,72 MB
Release : 2010-04-27
Category : Technology & Engineering
ISBN : 9814467650
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author : Timothy R. Oldham
Publisher : World Scientific
Page : 192 pages
File Size : 41,42 MB
Release : 1999
Category : Technology & Engineering
ISBN : 9789810233266
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Author : Ronald Donald Schrimpf
Publisher : World Scientific
Page : 349 pages
File Size : 33,77 MB
Release : 2004
Category : Technology & Engineering
ISBN : 9812389407
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semi-conductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Author : John D. Cressler
Publisher : CRC Press
Page : 1041 pages
File Size : 44,74 MB
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 143987431X
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.