Book Description
This volume contains papers on the following: CMOS devices and devices based on compound semiconductors; processing; silicon integrated technology and integrated circuit design; quantum physics; nanotechnology; nanodevices, sensors and microsystems. The latest news and future challenges in these fields are presented in invited papers. Contents: Nanotechnology and Quantum Devices: A New Strategy for In Situ Synthesis of Oligonucleotides Arrays for DNA Chip Technology (F Vinet et al.); Magnetotransport Properties of La-Ca-Mn-O Multilayers (C Christides); Charge Effects and Related Transport Phenomena in Nanosize Silicon/Insulator Structures (J A Berashevich et al.); Thermoelectric Properties of Composite Fermions (M Tsaousidou & G P Triberis); Design and Fabrication of Supported-Metal Catalysts Through Nanotechnology (I Zuburtikudis); Ground State Electronic Structure of Small Si Quantum Dots (C S Garoufalis et al.); Processing: Solid Interface Studies with Applications in Microelectronics (S Kennou et al.); Rapid Thermal Annealing of Arsenic Implanted Silicon for the Formation of Ultra Shallow n+p Junctions (N Georgoulas et al.); Simulation of the Formation and Characterization of Roughness in Photoresists (G P Patsis et al.); Development of a New Low Energy Electron Beam Lithography Simulation Tool (D Velessiotis et al.); CMOS Devices and Devices Based on Compound Semiconductors: Microhardness Characterization of Epitaxially Grown GaN Films. Effect of Light Ion Implantation (P Kavouras et al.); Multiple Quantum Well Solar Cells Under AM1 and Concentrated Sunlight (E Aperathitis et al.); The Influence of Silicon Interstitial Clustering on the Reverse Short Channel Effect (C Tsamis & D Tsoukalas); Noise Modeling of Interdigitated Gate CMOS Devices (E F Tsakas & A N Birbas); High Precision CMOS Euclidean Distance Computing Circuit (G Fikos & S Siskos); Microsystems: Alternative Signal Extraction Technique for Miniature Fluxgates (P D Dimitropoulos & J N Avaritsiotis); Silicon Capacitive Pressure Sensors and Pressure Switches Fabricated Using Silicon Fusion Bonding (S Koliopoulou et al.); Microsystems for Acoustical Signal Detection Applications (D K Fragoulis & J N Avaritsiotis); Capillary Format Bioanalytical Microsystems (K Misiakos et al.); Effectiveness of Local Thermal Isolation by Porous Silicon in a Silicon Thermal Sensor (D Pagonis et al.); Silicon Integrated Technology and Integrated Circuit Design: MOSFET Model Benchmarking Using a Novel CAD Tool (N A Nastos & Y Papananos); Power Amplifier Linearisation Techniques: An Overview (N Naskas & Y Papananos); The Design of a Ripple Carry Adiabatic Adder (V Pavlidis et al.); Maximum Power Estimation in CMOS VLSI Circuits (N E Evmorfopoulos et al.); Power Dissipation Considerations in Low-Voltage CMOS Circuits (A A Hatzopoulos); Microelectronics Networks/Technology Transfer and Exploitation: EURACCESS: A European Platform for Access to CMOS Processing (C L Claeys); MMN: Greek Network on Microelectronics, Microsystems and Nanotechnology (A G Nassiopoulou); Simulations of Molecular Electronics (S T Pantelides et al.); and other papers. Readership: Researchers, academics, industrialists and undergraduates in microelectronics, nanoscience, materials science, applied physics and condensed matter physics.