› › Modeling And Simulation Of Silicon Carbide Power Semiconductor Devices

Modeling And Electrothermal Simulation Of Sic Power Devices: Using Silvaco© Atlas

Author : Bejoy N Pushpakaran

Publisher : World Scientific

Page : 462 pages

File Size : 43,55 MB

Release : 2019-03-22

Category : Technology & Engineering

ISBN : 9813237848

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Book Description

The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)



Silicon Carbide Power Devices

Author : B. Jayant Baliga

Publisher : World Scientific

Page : 526 pages

File Size : 46,18 MB

Release : 2006-01-05

Category : Technology & Engineering

ISBN : 9812774521

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Book Description

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.



Fundamentals of Power Semiconductor Devices

Author : B. Jayant Baliga

Publisher : Springer

Page : 1114 pages

File Size : 10,94 MB

Release : 2018-09-28

Category : Technology & Engineering

ISBN : 3319939882

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Book Description

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.



SiC Power Module Design

Author : Alberto Castellazzi

Publisher : IET

Page : 359 pages

File Size : 38,94 MB

Release : 2021-12-09

Category : Technology & Engineering

ISBN : 1785619071

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Book Description

Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.



Modelling, Simulation and Intelligent Computing

Author : Nilesh Goel

Publisher : Springer Nature

Page : 650 pages

File Size : 50,58 MB

Release : 2020-07-28

Category : Computers

ISBN : 9811547750

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Book Description

This book presents articles from the International Conference on Modelling, Simulation and Intelligent Computing (MoSICom 2020), held at Birla Institute of Technology and Science Pilani, Dubai Campus, Dubai, UAE, in January 2020. Modelling and simulation are becoming increasingly important in a wide variety of fields, from Signal, Image and Speech Processing, and Microelectronic Devices and Circuits to Intelligent Techniques, Control and Energy Systems, and Power Electronics. Further, Intelligent Computational techniques are gaining significance in interdisciplinary engineering applications, such as Robotics and Automation, Healthcare Technologies, IoT and its Applications. Featuring the latest advances in the field of engineering applications, this book serves as a definitive reference resource for researchers, professors and practitioners interested in exploring advanced techniques in the field of modelling, simulation and computing.



POWER/HVMOS Devices Compact Modeling

Author : Wladyslaw Grabinski

Publisher : Springer Science & Business Media

Page : 210 pages

File Size : 48,27 MB

Release : 2010-07-20

Category : Technology & Engineering

ISBN : 9048130468

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Book Description

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.



SiC based Miniaturized Devices

Author : Stephen Edward Saddow

Publisher : MDPI

Page : 170 pages

File Size : 47,26 MB

Release : 2020-06-18

Category : Technology & Engineering

ISBN : 3039360108

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Book Description

MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.



Gallium Nitride And Silicon Carbide Power Devices

Author : B Jayant Baliga

Publisher : World Scientific Publishing Company

Page : 592 pages

File Size : 35,45 MB

Release : 2016-12-12

Category : Technology & Engineering

ISBN : 9813109424

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Book Description

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.



SiC Materials and Devices

Author : Michael Shur

Publisher : World Scientific

Page : 143 pages

File Size : 24,74 MB

Release : 2007

Category : Science

ISBN : 9812703837

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Book Description

Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.



Vertical GaN and SiC Power Devices

Author : Kazuhiro Mochizuki

Publisher : Artech House

Page : 284 pages

File Size : 30,1 MB

Release : 2018-04-30

Category : Technology & Engineering

ISBN : 1630814296

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Book Description

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.