Compound Semiconductor Photovoltaics


Book Description

This volume focuses on basic and applied materials research related to compound semiconductors. Emphasis is on materials that are used, or have clear potential use, as thin films in solar cells and spin-off applications. Relevant materials include Cu(In, Ga, Al)(Se, S)2, MX (M = Zn and/or Cd; X = S, Se and/or Te), III-V photovoltaic materials, and transparent conducting oxides. Understanding fundamental materials limitations, real or perceived, are of particular interest. Highlights center on: materials-related prerequisites for high-efficiency thin-film solar cells; the dynamics of chemical treatment/etching of CdTe with emphasis on back contacting; high-resolution microanalysis of grain boundaries and surface chemistry and how they affect device performance; the role and significance of transparent conducting oxides in device performance; and the electronic structure of highly mismatched III-V alloy semiconductors.




Actinides: Volume 802


Book Description

Actinides are an important, if sometimes unwanted, part of highly technological societies. Actinides pose an extreme scientific challenge to the materials research community. Their complex electronic structure results in many abnormal properties that even today are not well understood. The focus of this book is fundamental actinide science and its role in resolving technical challenges posed by actinide materials. Both basic and applied experimental approaches, as well as theoretical modeling and computational simulations, are featured. Topics for the inaugural actinides symposium include: actinide phase stability, transformations and aging; phononic and electronic structure; actinides and the environment; actinide solution and interfacial chemistry; actinide science and technology; theory of actinides - elemental phases, alloys and compounds; and superconductivity, correlated behavior and quantum criticality.




Actinides: Volume 802


Book Description

Actinides are an important, if sometimes unwanted, part of highly technological societies. Actinides pose an extreme scientific challenge to the materials research community. Their complex electronic structure results in many abnormal properties that even today are not well understood. The focus of this book is fundamental actinide science and its role in resolving technical challenges posed by actinide materials. Both basic and applied experimental approaches, as well as theoretical modeling and computational simulations, are featured. Topics for the inaugural actinides symposium include: actinide phase stability, transformations and aging; phononic and electronic structure; actinides and the environment; actinide solution and interfacial chemistry; actinide science and technology; theory of actinides - elemental phases, alloys and compounds; and superconductivity, correlated behavior and quantum criticality.




Continuous Nanophase and Nanostructured Materials: Volume 788


Book Description

This book focuses on recent advances in nanostructured and nanophase materials and their applications. Nanostructured materials consist of domains of less than 100nm and include atom clusters and cluster assemblies, one- and two-dimensionally modulated layers and three-dimensional structures. The term 'nanophase' refers to structures comprised of domains or particles of a single material that are typically less than 100nm, whereas 'nanocomposite' refers to a composite of more than one nanophase. Nanoscale materials can be engineered as homogeneous or porous ceramics, metals, metal oxides, semiconductors, organic polymers, or as composite materials containing these components. This book brings together scientists from many disciplines to share and discuss advances in the field. Topics include: nanophase materials; nanocomposite materials; nanoporous materials; nanostructured materials; applications and properties of nanostructured materials; carbon nanotubes; nanostructured thin films and coatings; and theoretical and modeling studies of nanostructured materials.




Chemical-Mechanical Planarization: Volume 767


Book Description

Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.




Nanostructuring Materials with Energetic Beams: Volume 777


Book Description

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.




CMOS Front-End Materials and Process Technology: Volume 765


Book Description

In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.