Nonequilibrium Quantum Transport Physics In Nanosystems: Foundation Of Computational Nonequilibrium Physics In Nanoscience And Nanotechnology


Book Description

This book presents the first comprehensive treatment of discrete phase-space quantum mechanics and the lattice Weyl-Wigner formulation of energy band dynamics, by the originator of these theoretical techniques. The author's quantum superfield theoretical formulation of nonequilibrium quantum physics is given in real time, without the awkward use of artificial time contour employed in previous formulations. These two main quantum theoretical techniques combine to yield general (including quasiparticle-pairing dynamics) and exact quantum transport equations in phase-space, appropriate for nanodevices. The derivation of transport formulas in mesoscopic physics from the general quantum transport equations is also treated. Pioneering nanodevices are discussed in the light of the quantum-transport physics equations, and an in-depth treatment of the physics of resonant tunneling devices is given. Operator Hilbert-space methods and quantum tomography are discussed. Discrete phase-space quantum mechanics on finite fields is treated for completeness and by virtue of its relevance to quantum computing. The phenomenological treatment of evolution superoperator and measurements is given to help clarify the general quantum transport theory. Quantum computing and information theory is covered to demonstrate the foundational aspects of discrete quantum dynamics, particularly in deriving a complete set of multiparticle entangled basis states.




Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices


Book Description

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.




The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation


Book Description

For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.




Strongly Interacting Quantum Systems out of Equilibrium


Book Description

Over the last decade new experimental tools and theoretical concepts are providing new insights into collective nonequilibrium behavior of quantum systems. The exquisite control provided by laser trapping and cooling techniques allows us to observe the behavior of condensed bose and degenerate Fermi gases under nonequilibrium drive or after `quenches' in which a Hamiltonian parameter is suddenly or slowly changed. On the solid state front, high intensity short-time pulses and fast (femtosecond) probes allow solids to be put into highly excited states and probed before relaxation and dissipation occur. Experimental developments are matched by progress in theoretical techniques ranging from exact solutions of strongly interacting nonequilibrium models to new approaches to nonequilibrium numerics. The summer school `Strongly interacting quantum systems out of equilibrium' held at the Les Houches School of Physics as its XCIX session was designed to summarize this progress, lay out the open questions and define directions for future work. This books collects the lecture notes of the main courses given in this summer school.




Quantum Transport Calculations for Nanosystems


Book Description

As electric devices become smaller and smaller, transport simulations based on the quantum mechanics become more and more important. There are currently numerous textbooks on the basic concepts of quantum transport, but few present calculation methods in detail. This book provides various quantum transport simulation methods and shows applications




Granular Nanoelectronics


Book Description

The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.




Nonequilibrium Carrier Dynamics in Semiconductors


Book Description

"Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.




Quench Dynamics in Interacting and Superconducting Nanojunctions


Book Description

Effects of many-body interactions and superconducting correlations have become central questions in the quantum transport community. While most previous works investigating current fluctuations in nanodevices have been restricted to the stationary regime, Seoane's thesis extends these studies to the time domain. It provides relevant information about the time onset of electronic correlations mediated by interactions and superconductivity. This knowledge is essential for the development of fast electronic devices, as well as novel applications requiring fast manipulations, such as quantum information processing. In addition, the thesis establishes contact with issues of broad current interest such as non-equilibrium quantum phase transitions.




Granular Nanoelectronics


Book Description

The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.




Transport in Nanostructures


Book Description

The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.