Author : Eric David Marshall
Publisher :
Page : 590 pages
File Size : 46,82 MB
Release : 1989
Category :
ISBN :
Author : Edouard Philippe Baaklini
Publisher :
Page : 282 pages
File Size : 26,91 MB
Release : 1990
Category : Gallium arsenide semiconductors
ISBN :
Author : Tim B. Haddock
Publisher :
Page : 136 pages
File Size : 29,64 MB
Release : 1988
Category : Gallium arsenide semiconductors
ISBN :
Author :
Publisher :
Page : 68 pages
File Size : 41,70 MB
Release : 1988
Category :
ISBN :
A new approach for fabricating nonalloyed ohmic contacts to gallium arsenide was developed. The approach uses ultrathin layers of heavily doped germanium or silicon in contact with gallium arsenide to alter the Schottky barrier height(phi B) at the gallium arsenide interface. For n-type gallium arsenide phi B could be varied from about 0.3 to 1.0 eV. The low barriers are useful for tunneling ohmic contacts to n-gallium arsenide while the high barriers should be useful for p-gallium arsenide ohmic contacts and for Field Effect Transistor (FET) gate applications. In some instances it was necessary to interpose a thin nonmetallic electrically conducting barrier between the contact metal and the thin germanium or silicon layer to preserve optimum contact properties. Specific contact resistivity measurements indicated that contact resistivity
Author : Kenneth L. Klohn
Publisher :
Page : 17 pages
File Size : 12,9 MB
Release : 1968
Category :
ISBN :
A study was made of various metals and metal alloys (Ag, Ni, In, and Au-Zn) which would make ohmic contacts to p- or n-type GaAs to determine the value of contact resistivity as a function of substrate impurity concentration. Contact resistivity values for p-type material varied from 1.2 x 10 to the -4th power ohm-cm sq for 2.8 x 10 to the 17th power/cc to 7.3 x 10 to the -7th ohm-cm sq for 9 x 10 to the 19th power/cc, and for n-type material from 2.5 x 10 to the -4th power ohm-cm sq for 1 x 10 to the 17th power/cc to 1.5 x 10 to the -5th power ohm-cm sq for 3 x 10 to the 18th power/cc. The metals were applied by evaporation or plating and followed by microalloying. The improvement in contact resistivity, as substrate impurity concentration increases, indicates the desirability of incorporating a thin, heavily doped region at the surface of a device by means of diffusion or epitaxy. The improvement in power output for a typical laser diode and its modified versions resulting from the reduction in R sub s is compared. (Author).
