› › Physics Of Carrier Transport Mechanisms And Ultra Small Scale Phenomena For Theoretical Modelling Of Nanometr Mos Transistors From Diffusive To Ballistic Regimes Of Operation

Nanowires

Author : Abbass A. Hashim

Publisher : BoD – Books on Demand

Page : 554 pages

File Size : 20,45 MB

Release : 2011-07-18

Category : Science

ISBN : 9533073187

Get eBook

Book Description

This potentially unique work offers various approaches on the implementation of nanowires. As it is widely known, nanotechnology presents the control of matter at the nanoscale and nanodimensions within few nanometers, whereas this exclusive phenomenon enables us to determine novel applications. This book presents an overview of recent and current nanowire application and implementation research worldwide. We examine methods of nanowire synthesis, types of materials used, and applications associated with nanowire research. Wide surveys of global activities in nanowire research are presented, as well.



Soft Errors

Author : Jean-Luc Autran

Publisher : CRC Press

Page : 532 pages

File Size : 35,92 MB

Release : 2017-12-19

Category : Technology & Engineering

ISBN : 1351831550

Get eBook

Book Description

Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment—one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.



Fundamentals of Nanotransistors

Author : Mark Lundstrom

Publisher : World Scientific Publishing Company Incorporated

Page : 342 pages

File Size : 36,67 MB

Release : 2018

Category : Technology & Engineering

ISBN : 9789814571722

Get eBook

Book Description

The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.



Nanoscale Transistors

Author : Mark Lundstrom

Publisher : Springer Science & Business Media

Page : 223 pages

File Size : 32,58 MB

Release : 2006-06-18

Category : Technology & Engineering

ISBN : 0387280030

Get eBook

Book Description

To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules



Solid State Properties

Author : Mildred Dresselhaus

Publisher : Springer

Page : 521 pages

File Size : 36,90 MB

Release : 2018-01-17

Category : Science

ISBN : 3662559226

Get eBook

Book Description

This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.



Semiconductor Detector Systems

Author : Helmuth Spieler

Publisher : OUP Oxford

Page : 513 pages

File Size : 28,86 MB

Release : 2005-08-25

Category : Technology & Engineering

ISBN : 0191523658

Get eBook

Book Description

Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.



Transport in Nanostructures

Author : David K. Ferry

Publisher : Cambridge University Press

Page : 671 pages

File Size : 35,42 MB

Release : 2009-08-20

Category : Science

ISBN : 0521877482

Get eBook

Book Description

The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.



Fundamentals of Modern VLSI Devices

Author : Yuan Taur

Publisher : Cambridge University Press

Page : 0 pages

File Size : 46,35 MB

Release : 2013-05-02

Category : Technology & Engineering

ISBN : 9781107635715

Get eBook

Book Description

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.



Electrons and Phonons

Author : J.M. Ziman

Publisher : Oxford University Press

Page : 572 pages

File Size : 33,55 MB

Release : 2001-02

Category : Science

ISBN : 9780198507796

Get eBook

Book Description

This is a classic text of its time in condensed matter physics.



Semiconductor Material and Device Characterization

Author : Dieter K. Schroder

Publisher : John Wiley & Sons

Page : 800 pages

File Size : 28,5 MB

Release : 2015-06-29

Category : Technology & Engineering

ISBN : 0471739065

Get eBook

Book Description

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.