Author : W. N. G. Hitchon
Publisher : Cambridge University Press
Page : 235 pages
File Size : 36,30 MB
Release : 1999-01-28
Category : Computers
ISBN : 0521591759
An up-to-date description of plasma etching and deposition in semiconductor fabrication.
Author : W. N. G. Hitchon
Publisher : Cambridge University Press
Page : 232 pages
File Size : 28,53 MB
Release : 1999-01-28
Category : Technology & Engineering
ISBN : 9780521591751
Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.
Author : Paul Williams
Publisher : Springer Science & Business Media
Page : 634 pages
File Size : 33,24 MB
Release : 1997-05-31
Category : Technology & Engineering
ISBN : 9780792345671
Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.
Author : Hong Xiao
Publisher :
Page : 0 pages
File Size : 16,13 MB
Release : 2001
Category : Semiconductor industry
ISBN : 9780130224040
For courses in Semiconductor Manufacturing Technology, IC Fabrication Technology, and Devices: Conventional Flow. This up-to-date text on semiconductor manufacturing processes takes into consideration the rapid development of the industry's technology. It thoroughly describes the complicated and new IC chip fabrication processes in detail with minimum mathematics, physics, and chemistry. Advanced technologies are covered along with older ones to assist students in understanding the development processes from a historic point of view.
Author : Kazuo Nojiri
Publisher : Springer
Page : 126 pages
File Size : 50,36 MB
Release : 2014-10-25
Category : Technology & Engineering
ISBN : 3319102958
This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.
Author : R. Mohan Sankaran
Publisher : CRC Press
Page : 417 pages
File Size : 33,77 MB
Release : 2017-12-19
Category : Science
ISBN : 1439866775
We are at a critical evolutionary juncture in the research and development of low-temperature plasmas, which have become essential to synthesizing and processing vital nanoscale materials. More and more industries are increasingly dependent on plasma technology to develop integrated small-scale devices, but physical limits to growth, and other challenges, threaten progress. Plasma Processing of Nanomaterials is an in-depth guide to the art and science of plasma-based chemical processes used to synthesize, process, and modify various classes of nanoscale materials such as nanoparticles, carbon nanotubes, and semiconductor nanowires. Plasma technology enables a wide range of academic and industrial applications in fields including electronics, textiles, automotives, aerospace, and biomedical. A prime example is the semiconductor industry, in which engineers revolutionized microelectronics by using plasmas to deposit and etch thin films and fabricate integrated circuits. An overview of progress and future potential in plasma processing, this reference illustrates key experimental and theoretical aspects by presenting practical examples of: Nanoscale etching/deposition of thin films Catalytic growth of carbon nanotubes and semiconductor nanowires Silicon nanoparticle synthesis Functionalization of carbon nanotubes Self-organized nanostructures Significant advances are expected in nanoelectronics, photovoltaics, and other emerging fields as plasma technology is further optimized to improve the implementation of nanomaterials with well-defined size, shape, and composition. Moving away from the usual focus on wet techniques embraced in chemistry and physics, the author sheds light on pivotal breakthroughs being made by the smaller plasma community. Written for a diverse audience working in fields ranging from nanoelectronics and energy sensors to catalysis and nanomedicine, this resource will help readers improve development and application of nanomaterials in their own work. About the Author: R. Mohan Sankaran received the American Vacuum Society’s 2011 Peter Mark Memorial Award for his outstanding contributions to tandem plasma synthesis.
Author : Gary S. May
Publisher : John Wiley & Sons
Page : 428 pages
File Size : 22,12 MB
Release : 2006-05-26
Category : Technology & Engineering
ISBN : 0471790273
A practical guide to semiconductor manufacturing from processcontrol to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Controlcovers all issues involved in manufacturing microelectronic devicesand circuits, including fabrication sequences, process control,experimental design, process modeling, yield modeling, and CIM/CAMsystems. Readers are introduced to both the theory and practice ofall basic manufacturing concepts. Following an overview of manufacturing and technology, the textexplores process monitoring methods, including those that focus onproduct wafers and those that focus on the equipment used toproduce wafers. Next, the text sets forth some fundamentals ofstatistics and yield modeling, which set the foundation for adetailed discussion of how statistical process control is used toanalyze quality and improve yields. The discussion of statistical experimental design offers readers apowerful approach for systematically varying controllable processconditions and determining their impact on output parameters thatmeasure quality. The authors introduce process modeling concepts,including several advanced process control topics such asrun-by-run, supervisory control, and process and equipmentdiagnosis. Critical coverage includes the following: * Combines process control and semiconductor manufacturing * Unique treatment of system and software technology and managementof overall manufacturing systems * Chapters include case studies, sample problems, and suggestedexercises * Instructor support includes electronic copies of the figures andan instructor's manual Graduate-level students and industrial practitioners will benefitfrom the detailed exami?nation of how electronic materials andsupplies are converted into finished integrated circuits andelectronic products in a high-volume manufacturingenvironment. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment. An Instructor Support FTP site is also available.
Author : Toshiaki Makabe
Publisher : CRC Press
Page : 355 pages
File Size : 21,96 MB
Release : 2006-03-27
Category : Science
ISBN : 1420012274
Without plasma processing techniques, recent advances in microelectronics fabrication would not have been possible. But beyond simply enabling new capabilities, plasma-based techniques hold the potential to enhance and improve many processes and applications. They are viable over a wide range of size and time scales, and can be used for deposition,
Author : Zhong Xu
Publisher : Springer
Page : 281 pages
File Size : 34,47 MB
Release : 2017-09-21
Category : Technology & Engineering
ISBN : 9811057249
This book provides a comprehensive introduction to and technical description of a unique patented surface-modification technology: plasma surface metallurgy with double-glow discharge plasma process, known as the Xu-Tec process. As such it promotes further attention and interest in scientific research and engineering development in this area, as well as industrial utilization and product commercialization. The Xu-Tec process has opened up a new material engineering field of “Plasma Surface Metallurgy”. This surface-modification process can transform many low-grade and low-cost industrial engineering materials into “gold” materials with a high value and high grade or special functions. This improved material can be widely used in industrial production to improve the surface performance and quality of mechanical parts and manufacturing products, and to conserve expensive alloying elements for the benefit of all mankind. “This book will be valuable to those in the general area of surface metallurgy. The substantial description of the Xu-Tec process is very important and should assist in expanding the use of this superior technique. The in-depth explanation of glow discharges and their use in general will also serve as a valuable reference in the field.” James E. Thompson, Prof. Fellow of the IEEE Dean of Engineering Emeritus University of Missouri, Columbia, Missouri, USA November, 2016 "A BREAKTHROUGH IN MAKING METAL TOUGHER". ---- SCIENCE & TECHNOLOGY Business Week, July 24, 1989 “NOVEL SURFACE ALLOYING PROCESS” --- THE LEADING EDGE TECHNOLOGY WORDWIDE Materials and Processing Report, Dec. 1987
Author : Loucas G. Christophorou
Publisher : Springer Science & Business Media
Page : 791 pages
File Size : 19,32 MB
Release : 2012-12-06
Category : Science
ISBN : 1441989714
This volume deals with the basic knowledge and understanding of fundamental interactions of low energy electrons with molecules. It pro vides an up-to-date and comprehensive account of the fundamental in teractions of low-energy electrons with molecules of current interest in modern technology, especially the semiconductor industry. The primary electron-molecule interaction processes of elastic and in elastic electron scattering, electron-impact ionization, electron-impact dissociation, and electron attachment are discussed, and state-of-the art authoritative data on the cross sections of these processes as well as on rate and transport coefficients are provided. This fundamental knowledge has been obtained by us over the last eight years through a critical review and comprehensive assessment of "all" available data on low-energy electron collisions with plasma processing gases which we conducted at the National Institute of Standards and Technology (NIST). Data from this work were originally published in the Journal of Physical and Chemical Reference Data, and have been updated and expanded here. The fundamental electron-molecule interaction processes are discussed in Chapter 1. The cross sections and rate coefficients most often used to describe these interactions are defined in Chapter 2, where some recent advances in the methods employed for their measurement or calculation are outlined. The methodology we adopted for the critical evaluation, synthesis, and assessment of the existing data is described in Chapter 3. The critically assessed data and recommended or suggested cross sections and rate and transport coefficients for ten plasma etching gases are presented and discussed in Chapters 4, 5, and 6.
