Epitaxial Graphene on Silicon Carbide


Book Description

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.




Epitaxial Graphene on Silicon Carbide


Book Description

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition. The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.




The New International System of Units (SI)


Book Description

The International System of Units, the SI, provides the foundation for all measurements in science, engineering, economics, and society. The SI has been fundamentally revised in 2019. The new SI is a universal and highly stable unit system based on invariable constants of nature. Its implementation rests on quantum metrology and quantum standards, which base measurements on the manipulation and counting of single quantum objects, such as electrons, photons, ions, and flux quanta. This book explains and illustrates the new SI, its impact on measurements, and the quantum metrology and quantum technology behind it. The book is based on the book ?Quantum Metrology: Foundation of Units and Measurements? by the same authors. From the contents: -Measurement -The SI (Système International d?Unités) -Realization of the SI Second: Thermal Beam Cs Clock, Laser Cooling, and the Cs Fountain Clock -Flux Quanta, Josephson Effect, and the SI Volt -Quantum Hall Effect, the SI Ohm, and the SI Farad -Single-Charge Transfer Devices and the SI Ampere -The SI Kilogram, the Mole, and the Planck constant -The SI Kelvin and the Boltzmann Constant -Beyond the present SI: Optical Clocks and Quantum Radiometry -Outlook




Graphene Nanoelectronics


Book Description

This book describes how will graphene can be used as a replacement for Silicon technology “ and the potential benefits of using graphene in a wide variety of electronic applications. Graphene has emerged as a potential candidate to replace traditional CMOS for a number of electronic applications; this book presents the latest advances in graphene nanoelectronics and details its use in alternative channel materials, on-chip interconnects, heat spreaders, RF transistors, NEMS, and sensors. The book also provides details on the various methods to grow graphene, including epitaxial, CVD, and chemical methods. With the growing interest in this material, this book serves as a spring-board for anyone trying to start working on this topic. The book is also suitable to experts who wish to update themselves with the latest findings in the field.




Graphene Nanoelectronics


Book Description

Graphene is a perfectly two-dimensional single-atom thin membrane with zero bandgap. It has attracted huge attention due to its linear dispersion around the Dirac point, excellent transport properties, novel magnetic characteristics, and low spin-orbit coupling. Graphene and its nanostructures may have potential applications in spintronics, photonics, plasmonics and electronics. This book brings together a team of experts to provide an overview of the most advanced topics in theory, experiments, spectroscopy and applications of graphene and its nanostructures. It covers the state-of-the-art in tutorial-like and review-like manner to make the book useful not only to experts, but also newcomers and graduate students.




Handbook of Crystal Growth


Book Description

Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials




Silicon Carbide and Advanced Materials


Book Description

Special topic volume with invited peer-reviewed papers only




Chemistry of Graphene


Book Description

Chemistry of Graphene - Synthesis, Reactivity, Applications, and Toxicities presents an in-depth exploration of new trends, concepts, and phenomena in the general field of graphene research to introduce graphene science in a multidimensional manner providing a definitive foundation and provoking new ideas and critical insight into the emerging areas of research for the professional researchers and other practitioners. The development of graphene science, which has been rapidly expanding since the year 2024, still attracts a lot of attention with expanding new opportunities and potential in the global market. The current book opens with an in-depth survey of novel methods that have characterized graphene production research over the last three decades. It lends itself to the shifting trends toward the scalability of graphene technologies, the diversified emerging graphene-related materials, processes, and opportunities for fashioning novel scalable applications. The book continues to explore the prospects of graphene in electrochemical applications and wraps up with a survey of the potential harmful effects of graphene and its implications on graphene applications in medicine, environment, and related fields. The work represents an in-depth effort that can serve to introduce early career scholars and practitioners to graphene research but also remains adequately engaging to provoke new thought lines that stimulate the development of new research topics for expert professionals.




Physics and Chemistry of Graphene (Second Edition)


Book Description

Graphene has been attracting growing attentions in physics, chemistry, and device applications after the discovery of micromechanically cleaved graphene sheet by A. Geim and K. Novoselov, who were awarded the 2010 Nobel Prize in Physics. The electronic structure of graphene, which is described in terms of massless Dirac fermions, brings about unconventional electronic properties, which are not only an important basic issue in condensed matter physics but also a promising target of cutting-edge electronics/spintronics device applications. Meanwhile, from chemistry aspect, graphene is the extreme of condensed polycyclic hydrocarbon molecules extrapolated to infinite size. Here, the concept on aromaticity, which organic chemists utilize, is applicable. Interesting issues appearing between physics and chemistry are pronounced in nanosized graphene (nanographene), as we recognize the importance of the shape of nanographene in understanding its electronic structure. This book comprehensively discusses the fundamental issues related to the electronic, magnetic, and chemical properties of condensed polycyclic hyodrocarbon molecules, nanographene, and graphene.