Mechanism for Recombination of Radiation-induced Point Defects at Interphase Boundaries


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MD studies of collision cascades in KS-type Cu-Nb interfaces are performed, revealing that Cu interstitials are preferentially loaded into the interface while on the bcc Nb side there is very little absorption of interstitials. The interstitial loading effect at two types of heterogeneous Cu-Nb interfaces, both KS-type and SPD {l_brace}112{r_brace}-type interfaces is studied: (a) The Cu interstitials are observed to spontaneously emit from both types of interfaces to annihilate vacancies in the nearby bulk, (b) MD and NEB studies are used to characterize low barrier emission processes. Our study also indicates that interstitials do not lose their identity when absorbed even at interfaces where they become significantly delocalized.




JPIII


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CCD Image Sensors in Deep-Ultraviolet


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As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.




Enhanced Radiation Tolerance in Sputtered Cu/V Multilayers


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High energy particle (neutron, proton and He ions) irradiation to materials typically leads to deteriorating properties, including void swelling, blistering, embrittlement, fracture and exfoliation of surfaces. This dissertation examines size dependent radiation damage in nanostructured metallic multilayers synthesized by the magnetron sputtering technique at room temperature. It reveals the roles of interface in achieving enhanced radiation tolerance in metallic materials. The microstructure and mechanical properties of as-deposited Cu/V multilayer films are systemically investigated, providing the basis for studying radiation damage mechanisms. Sputter-deposited Cu/V multilayers are subjected to helium (He) ion irradiation at room temperature with a peak dose of 6 displacements per atom (dpa). The average helium bubble density and lattice expansion induced by radiation decrease significantly with decreasing h, where h is individual layer thickness. The magnitude of radiation hardening decreases with decreasing h, and becomes negligible when h is 2.5 nm or less. The interactions between interfaces and radiation induced point defects and the evolution of microstructurs and mechanical behavior are discussed. This study indicates that nearly immiscible Cu/V interfaces spaced a few nm apart can effectively reduce the concentration of radiation induced point defects. Dose dependent radiation damage at room temperature in these Cu/V multilayers is systematically investigated with a peak dose in the range of 1-12 dpa. Peak bubble density increases with increasing dose, but it is much lower in Cu/V 2.5 nm multilayers than that in Cu/V 50 nm specimens. A similar radiation hardening trend is observed in multilayers irradiated at different fluences. Radiation hardening increases with dose and seems to reach saturation at a peak dose of 6 dpa. Negligible hardening for fine (h less than/equal to 2.5 nm) multilayers is observed at all dose levels. Thermal stability of Cu/V multilayers is revealed by in situ annealing inside a transmission electron microscope. During isothermal annealing at 600 degrees C grain boundary grooving occurs across layer interfaces in Cu/V 50 nm specimens, whereas Cu/V 5 nm multilayers appear rather stable. Annealing of Cu/V multilayers at 400 degrees C leads to hardening of multilayers, whereas softening occurs in Cu/V multilayers annealed at 600 degrees C. The evolution of mechanical properties during annealing is correlated to the degradation of the layer interface and the consequent reduction of interface resistance to the transmission of single dislocation.




New Insulators Devices and Radiation Effects


Book Description

Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.













Semiconductor Wafer Bonding


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