Rapid Thermal and Other Short-time Processing Technologies II


Book Description

"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."




Rapid Thermal and Other Short-time Processing Technologies


Book Description

The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.







Rapid Thermal Processing for Future Semiconductor Devices


Book Description

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices.This book covers the following areas: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.







Silicon Front-end Junction Formation Technologies


Book Description

Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.







Rapid Thermal Processing


Book Description

This is the first definitive book on rapid thermal processing (RTP), an essential namufacturing technology for single-wafer processing in highly controlled environments. Written and edited by nine experts in the field, this book covers a range of topics for academics and engineers alike, moving from basic theory to advanced technology for wafer manufacturing. The book also provides new information on the suitability or RTP for thin film deposition, junction formation, silicides, epitaxy, and in situ processing. Complete discussions on equipment designs and comparisons between RTP and other processing approaches also make this book useful for supplemental information on silicon processing, VLSI processing, and integrated circuit engineering.




Formation of Silicon Nitride from the 19th to the 21st Century


Book Description

This comprehensive reference gathers information published on the chemistry of silicon nitride and its products, uses, and markets. Separate chapters overview the manufacture of silicon nitride powder, the production of silicon nitride ceramics via the reaction bonding process, the intrinsic reactions between crystalline silicon surfaces and N2 for silicon wafers, nitridation of Si-O based materials, and chemical vapor deposition of Si-H compounds. The author, who originally worked on a similar book for the Gmelin Institute, cites 4,000-plus source documents and points the researcher to relevant handbooks, papers, and review articles for further reading. Distributed in the U.S. by Enfield. Annotation : 2005 Book News, Inc., Portland, OR (booknews.com).