Applied RHEED


Book Description

The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.







Compendium of Surface and Interface Analysis


Book Description

This book concisely illustrates the techniques of major surface analysis and their applications to a few key examples. Surfaces play crucial roles in various interfacial processes, and their electronic/geometric structures rule the physical/chemical properties. In the last several decades, various techniques for surface analysis have been developed in conjunction with advances in optics, electronics, and quantum beams. This book provides a useful resource for a wide range of scientists and engineers from students to professionals in understanding the main points of each technique, such as principles, capabilities and requirements, at a glance. It is a contemporary encyclopedia for selecting the appropriate method depending on the reader's purpose.




High Energy Electron Diffraction and Microscopy


Book Description

This book is an in-depth treatment of the theoretical background relevant to an understanding of materials that can be obtained by using high-energy electron diffraction and microscopy.




Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces


Book Description

This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.




In Situ Characterization of Thin Film Growth


Book Description

Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. - Chapters review electron diffraction techniques, including the methodology for observations and measurements - Discusses the principles and applications of photoemission techniques - Examines alternative in situ characterisation techniques




Physics, Fabrication, and Applications of Multilayered Structures


Book Description

Low-dimensional materials are of fundamental interest in physics and chemistry and have also found a wide variety of technological applica tions in fields ranging from microelectronics to optics. Since 1986, several seminars and summer schools devoted to low-dimensional systems have been supported by NATO. The present one, Physics, Fabrication and Applications of Multilayered structures, brought together specialists from different fields in order to review fabrication techniques, charac terization methods, physics and applications. Artificially layered materials are attractive because alternately layering two (or more) elements, by evaporation or sputtering, is a way to obtain new materials with (hopefully) new physical properties that pure materials or alloys do not allow. These new possibilities can be ob tained in electronic transport, optics, magnetism or the reflectivity of x-rays and slow neutrons. By changing the components and the thickness of the layers one can track continuously how the new properties appear and follow the importance of the multilayer structure of the materials. In addition, with their large number of interfaces the study of inter face properties becomes easier in multilayered structures than in mono layers or bilayers. As a rule, the role of the interface quality, and also the coupling between layers, increases as the thickness of the layer decreases. Several applications at the development stage require layer thicknesses of just a few atomic layers.







Electron Spectroscopy for Surface Analysis


Book Description

The development of surface physics and surface chemistry as a science is closely related to the technical development of a number of methods involving electrons either as an excitation source or as an emitted particle carrying characteristic information. Many of these various kinds of electron spectroscopies have become commercially available and have made their way into industrial laboratories. Others are still in an early stage, but may become of increasing importance in the future. In this book an assessment of the various merits and possible drawbacks of the most frequently used electron spectroscopies is attempted. Emphasis is put on prac tical examples and experimental design rather than on theoretical considerations. The book addresses itself to the reader who wishes to know which electron spectroscopy or which combination of different electron spectroscopies he may choose for the particular problems under investigation. After a brief introduction the practical design of electron spectrometers and their figures of merit important for the different applications are discussed in Chapter 2. Chapter 3 deals with electron excited electron spectroscopies which are used for the elemental analysis of surfaces. Structure analysis by electron diffrac tion is described in Chapter 4 with special emphasis on the use of electron diffrac tion for the investigation of surface imperfections. For the application of electron diffraction to surface crystallography in general, the reader is referred to Volume 4 of "Topics in Applied Physics".




Molecular Beam Epitaxy


Book Description

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.