State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)


Book Description

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.







Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)


Book Description

This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and device applications: inorganic wide-bandgap semiconductor materials, including III-nitrides, II-oxides, SiC, diamond, II-VI, and emerging materials.










Compound Semiconductor Power Transistors and


Book Description




State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2


Book Description

Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.