Ti-Si-N as a Cu Diffusion Barrier in Microelectronic Metallization
Author : Warren Franklin McArthur
Publisher :
Page : 284 pages
File Size : 38,25 MB
Release : 1999
Category :
ISBN :
Metallization
Author : S. P. Murarka
Publisher : Butterworth-Heinemann
Page : 268 pages
File Size : 31,4 MB
Release : 1993
Category : Computers
ISBN :
Book Description
This title covers fundemental concepts, properties and applicabilities of metals and alloys for use in various metallization schemes. Metallizations form the key components on electronic circuits - controlling device properties and providing power and device interconnections with the outside world or with other devices. The recent advent of submicron dimensions and increasingly faster devices in the semiconductor have challenged researchers to keep metallization schemes in line with new demanding requirements.
'Advances in Microelectronics: Reviews', Vol_1
Author : Sergey Yurish
Publisher : Lulu.com
Page : 536 pages
File Size : 23,19 MB
Release : 2017-12-24
Category : Technology & Engineering
ISBN : 8469786334
Book Description
The 1st volume of 'Advances in Microelectronics: Reviews' Book Series contains 19 chapters written by 72 authors from academia and industry from 16 countries. With unique combination of information in each volume, the 'Advances in Microelectronics: Reviews' Book Series will be of value for scientists and engineers in industry and at universities. In order to offer a fast and easy reading of the state of the art of each topic, every chapter in this book is independent and self-contained. All chapters have the same structure: first an introduction to specific topic under study; second particular field description including sensing applications. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Frontiers Of Solid State Chemistry, Proceedings Of The International Symposium On Solid State Chemistry In China
Author : Jiesheng Chen
Publisher : World Scientific
Page : 606 pages
File Size : 14,46 MB
Release : 2002-07-25
Category : Science
ISBN : 981448783X
Book Description
Solid state chemistry is a multidisciplinary field that deals with the synthesis, structural characterization and properties of various solids, and it has been playing a more and more important role in the design and preparation of advanced materials. This book includes the excellent research results recently obtained by a wide spectrum of solid state chemists both from China and from abroad. Among the distinguished contributors are C N R Rao, M Greenblatt and Y T Qian, to name a few. A variety of subjects representing the frontiers of solid state chemistry — which are categorized into solids with electrical, optical and magnetic properties; porous solids and catalysts; hybrid inorganic-organic solids; solid nanomaterials; and new synthetic methods and theory — are presented. This book will benefit readers who are interested in the chemistry and physics of solids, as well as materials scientists and engineers.The proceedings have been selected for coverage in:• Chemistry Citation IndexTM• Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)
Advanced Metallizations in Microelectronics: Volume 181
Author : Avishay Katz
Publisher :
Page : 672 pages
File Size : 48,1 MB
Release : 1990-09-12
Category : Technology & Engineering
ISBN :
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Interfacial Compatibility in Microelectronics
Author : Tomi Laurila
Publisher : Springer Science & Business Media
Page : 221 pages
File Size : 27,93 MB
Release : 2012-01-13
Category : Technology & Engineering
ISBN : 1447124693
Book Description
Interfaces between dissimilar materials are met everywhere in microelectronics and microsystems. In order to ensure faultless operation of these highly sophisticated structures, it is mandatory to have fundamental understanding of materials and their interactions in the system. In this difficult task, the “traditional” method of trial and error is not feasible anymore; it takes too much time and repeated efforts. In Interfacial Compatibility in Microelectronics, an alternative approach is introduced. In this revised method four fundamental disciplines are combined: i) thermodynamics of materials ii) reaction kinetics iii) theory of microstructures and iv) stress and strain analysis. The advantages of the method are illustrated in Interfacial Compatibility in Microelectronics which includes: solutions to several common reliability issues in microsystem technology, methods to understand and predict failure mechanisms at interfaces between dissimilar materials and an approach to DFR based on deep understanding in materials science, rather than on the use of mechanistic tools, such as FMEA. Interfacial Compatibility in Microelectronics provides a clear and methodical resource for graduates and postgraduates alike.
Materials Reliability in Microelectronics VII: Volume 473
Author : J. Joseph Clement
Publisher :
Page : 488 pages
File Size : 11,22 MB
Release : 1997-10-20
Category : Technology & Engineering
ISBN :
Book Description
The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.
Transition Metal Carbides and Nitrides
Author : Louis Toth
Publisher : Elsevier
Page : 296 pages
File Size : 27,98 MB
Release : 2014-04-11
Category : Technology & Engineering
ISBN : 032315722X
Book Description
Refractory Materials, Volume 7: Transition Metal Carbides and Nitrides discusses the developments in transition metal carbide and nitride research. This volume is organized into nine chapters that emphasize the mechanical and superconducting properties of these compounds. The introductory chapters deal with the general properties, preparation techniques, characterization, crystal chemistry, phase relationships, and thermodynamics of transition metal carbides and nitrides. The following chapter highlights the mechanical properties of these compounds, such as elastic and plastic deformation, fracture, strengthening mechanisms, and hardness. The discussion then shifts to specific electrical and magnetic properties, including electrical resistivity, Hall coefficient, and magnetic susceptibility. A separate chapter is devoted to carbides and nitrides as superconductors. The concluding chapters explore certain theories that explain the mechanisms of band structure and bonding in carbides and nitrides. This volume is of great value to research workers in metallurgy, ceramics, physics, chemistry, and related fields, as well as to advanced students investigating problems concerning high temperature materials or interstitial compounds.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Author : R. Ekwal Sah
Publisher : The Electrochemical Society
Page : 871 pages
File Size : 30,99 MB
Release : 2009
Category : Dielectric films
ISBN : 1566777100
Book Description
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Materials Reliability in Microelectronics
Author :
Publisher :
Page : 336 pages
File Size : 14,97 MB
Release : 1999
Category : Microelectronics
ISBN :
