Reliability Assessments


Book Description

This book provides engineers and scientists with a single source introduction to the concepts, models, and case studies for making credible reliability assessments. It satisfies the need for thorough discussions of several fundamental subjects. Section I contains a comprehensive overview of assessing and assuring reliability that is followed by discussions of: • Concept of randomness and its relationship to chaos • Uses and limitations of the binomial and Poisson distributions • Relationship of the chi-square method and Poisson curves • Derivations and applications of the exponential, Weibull, and lognormal models • Examination of the human mortality bathtub curve as a template for components Section II introduces the case study modeling of failure data and is followed by analyses of: • 5 sets of ideal Weibull, lognormal, and normal failure data • 83 sets of actual (real) failure data The intent of the modeling was to find the best descriptions of the failures using statistical life models, principally the Weibull, lognormal, and normal models, for characterizing the failure probability distributions of the times-, cycles-, and miles-to-failure during laboratory or field testing. The statistical model providing the preferred characterization was determined empirically by choosing the two-parameter model that gave the best straight-line fit in the failure probability plots using a combination of visual inspection and three statistical goodness-of-fit (GoF) tests. This book offers practical insight in dealing with single item reliability and illustrates the use of reliability methods to solve industry problems.







Humidity and Electronics


Book Description

Humidity and Electronics: Corrosion Reliability Issues and Preventive Measures provides comprehensive information on humidity related corrosion reliability issues surrounding electronics and how to tackle potential issues from a pro-active-design-prevention perspective. The book contains a mix of academic and industrial relevance, making it suitable for a detailed understanding on humidity issues on electronics, both for materials and corrosion experts and electronics and electrical experts. It will be useful for researchers, academics, and industrial personals involved in materials, corrosion, and electronics reliability aspects. - Provides basic and applied knowledge surrounding corrosion in electronics - Combines electronics/electrical and electrochemical aspects related to failure modes and mechanisms - Presents knowledge on influencing factors and how they can be used as preventive measures at the material, component, device and system level




Terrestrial Radiation Effects in ULSI Devices and Electronic Systems


Book Description

This book provides the reader with knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. The author covers faults and failures in ULSI devices induced by a wide variety of radiation fields, including electrons, alpha-rays, muons, gamma rays, neutrons and heavy ions. Readers will learn how to make numerical models from physical insights, to determine the kind of mathematical approaches that should be implemented to analyze radiation effects. A wide variety of prediction, detection, characterization and mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them, and explains how electronic systems including servers and routers are shut down due to environmental radiation. Provides an understanding of how electronic systems are shut down due to environmental radiation by constructing physical models and numerical algorithms Covers both terrestrial and avionic-level conditions Logically presented with each chapter explaining the background physics to the topic followed by various modelling techniques, and chapter summary Written by a widely-recognized authority in soft-errors in electronic devices Code samples available for download from the Companion Website This book is targeted at researchers and graduate students in nuclear and space radiation, semiconductor physics and electron devices, as well as other areas of applied physics modelling. Researchers and students interested in how a variety of physical phenomena can be modelled and numerically treated will also find this book to present helpful methods.




Biometric Recognition


Book Description

The LNCS volume 10996 constitutes the proceedings of the 13th Chinese Conference on Biometric Recognition, held in Urumchi, China, in August 2018. The 79 regular papers presented in this book were carefully reviewed and selected from 112 submissions. The papers cover a wide range of topics such as Biometrics, Speech recognition, Activity recognition and understanding, Online handwriting recognition, System forensics, Multi-factor authentication, Graphical and visual passwords.




Highly Integrated Gate Drivers for Si and GaN Power Transistors


Book Description

This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.​




ESD


Book Description

The scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena. ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD. With an emphasis on examples, this text: explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods; outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology; focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well as applying within the off-chip driver networks, and on-chip receivers; and highlights state-of-the-art ESD input circuits, as well as ESD power clamps networks. Continuing the author’s series of books on ESD, this book will be an invaluable reference for the professional semiconductor chip and system ESD engineer. Semiconductor device and process development, quality, reliability and failure analysis engineers will also find it an essential tool. In addition, both senior undergraduate and graduate students in microelectronics and IC design will find its numerous examples useful.







Wide Bandgap Semiconductors for Power Electronics


Book Description

Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.




Recent Advances in PMOS Negative Bias Temperature Instability


Book Description

This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.