Scientific Information Bulletin
Author :
Publisher :
Page : 1010 pages
File Size : 30,64 MB
Release : 1988
Category : Research
ISBN :
Author :
Publisher :
Page : 1010 pages
File Size : 30,64 MB
Release : 1988
Category : Research
ISBN :
Author : Yue Hao
Publisher : CRC Press
Page : 325 pages
File Size : 24,74 MB
Release : 2016-11-03
Category : Computers
ISBN : 1315351838
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Author : Howard R. Huff
Publisher : The Electrochemical Society
Page : 650 pages
File Size : 45,35 MB
Release : 2002
Category : Science
ISBN : 9781566773744
Author : Kokuritsu Kokkai Toshokan (Japan)
Publisher :
Page : 1596 pages
File Size : 25,22 MB
Release : 1997
Category : Science
ISBN :
Author : British Library. Document Supply Centre
Publisher :
Page : 696 pages
File Size : 36,18 MB
Release : 2002
Category : Conference proceedings
ISBN :
Author :
Publisher :
Page : 1594 pages
File Size : 31,77 MB
Release : 1997
Category : Science
ISBN :
Author : 国立国会図書館 (Japan)
Publisher :
Page : 1592 pages
File Size : 10,16 MB
Release : 1997
Category : Science
ISBN :
Author : Samares Kar
Publisher : The Electrochemical Society
Page : 565 pages
File Size : 32,63 MB
Release : 2006
Category : Dielectrics
ISBN : 1566775035
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : E M Anastassakis
Publisher : World Scientific
Page : 2768 pages
File Size : 11,98 MB
Release : 1990-11-29
Category :
ISBN : 9814583634
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
Page : 565 pages
File Size : 27,73 MB
Release : 2014-09-23
Category : Technology & Engineering
ISBN : 1118313550
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.