ISTFA 2019: Proceedings of the 45th International Symposium for Testing and Failure Analysis


Book Description

The theme for the 2019 conference is Novel Computing Architectures. Papers will include discussions on the advent of Artificial Intelligence and the promise of quantum computing that are driving disruptive computing architectures; Neuromorphic chip designs on one hand, and Quantum Bits on the other, still in R&D, will introduce new computing circuitry and memory elements, novel materials, and different test methodologies. These novel computing architectures will require further innovation which is best achieved through a collaborative Failure Analysis community composed of chip manufacturers, tool vendors, and universities.




VLSI Design and Test


Book Description

This book constitutes the refereed proceedings of the 23st International Symposium on VLSI Design and Test, VDAT 2019, held in Indore, India, in July 2019. The 63 full papers were carefully reviewed and selected from 199 submissions. The papers are organized in topical sections named: analog and mixed signal design; computing architecture and security; hardware design and optimization; low power VLSI and memory design; device modelling; and hardware implementation.




VLSI Design and Test


Book Description

This book constitutes the proceedings of the 26th International Symposium on VLSI Design and Test, VDAT 2022, which took place in Jammu, India, in July 2022. The 32 regular papers and 16 short papers presented in this volume were carefully reviewed and selected from 220 submissions. They were organized in topical sections as follows: Devices and Technology; Sensors; Analog/Mixed Signal; Digital Design; Emerging Technologies and Memory; System Design.







Advanced Nanoelectronics


Book Description

Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.




Integration of 2D Materials for Electronics Applications


Book Description

This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals




Artificial Intelligence-based Internet of Things Systems


Book Description

The book discusses the evolution of future generation technologies through Internet of Things (IoT) in the scope of Artificial Intelligence (AI). The main focus of this volume is to bring all the related technologies in a single platform, so that undergraduate and postgraduate students, researchers, academicians, and industry people can easily understand the AI algorithms, machine learning algorithms, and learning analytics in IoT-enabled technologies. This book uses data and network engineering and intelligent decision support system-by-design principles to design a reliable AI-enabled IoT ecosystem and to implement cyber-physical pervasive infrastructure solutions. This book brings together some of the top IoT-enabled AI experts throughout the world who contribute their knowledge regarding different IoT-based technology aspects.




Semiconductor Memories and Systems


Book Description

Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory




Negative Capacitance Field Effect Transistors


Book Description

This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.




High Performance Computing


Book Description

This book constitutes revised selected papers from 7 workshops that were held in conjunction with the ISC High Performance 2016 conference in Frankfurt, Germany, in June 2016. The 45 papers presented in this volume were carefully reviewed and selected for inclusion in this book. They stem from the following workshops: Workshop on Exascale Multi/Many Core Computing Systems, E-MuCoCoS; Second International Workshop on Communication Architectures at Extreme Scale, ExaComm; HPC I/O in the Data Center Workshop, HPC-IODC; International Workshop on OpenPOWER for HPC, IWOPH; Workshop on the Application Performance on Intel Xeon Phi – Being Prepared for KNL and Beyond, IXPUG; Workshop on Performance and Scalability of Storage Systems, WOPSSS; and International Workshop on Performance Portable Programming Models for Accelerators, P3MA.