Reliability Prediction for Microelectronics


Book Description

RELIABILITY PREDICTION FOR MICROELECTRONICS Wiley Series in Quality & Reliability Engineering REVOLUTIONIZE YOUR APPROACH TO RELIABILITY ASSESSMENT WITH THIS GROUNDBREAKING BOOK Reliability evaluation is a critical aspect of engineering, without which safe performance within desired parameters over the lifespan of machines cannot be guaranteed. With microelectronics in particular, the challenges to evaluating reliability are considerable, and statistical methods for creating microelectronic reliability standards are complex. With nano-scale microelectronic devices increasingly prominent in modern life, it has never been more important to understand the tools available to evaluate reliability. Reliability Prediction for Microelectronics meets this need with a cluster of tools built around principles of reliability physics and the concept of remaining useful life (RUL). It takes as its core subject the ‘physics of failure’, combining a thorough understanding of conventional approaches to reliability evaluation with a keen knowledge of their blind spots. It equips engineers and researchers with the capacity to overcome decades of errant reliability physics and place their work on a sound engineering footing. Reliability Prediction for Microelectronics readers will also find: Focus on the tools required to perform reliability assessments in real operating conditions Detailed discussion of topics including failure foundation, reliability testing, acceleration factor calculation, and more New multi-physics of failure on DSM technologies, including TDDB, EM, HCI, and BTI Reliability Prediction for Microelectronics is ideal for reliability and quality engineers, design engineers, and advanced engineering students looking to understand this crucial area of product design and testing.




Intelligent Computing


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Direct Copper Interconnection for Advanced Semiconductor Technology


Book Description

In the “More than Moore” era, performance requirements for leading edge semiconductor devices are demanding extremely fine pitch interconnection in semiconductor packaging. Direct copper interconnection has emerged as the technology of choice in the semiconductor industry for fine pitch interconnection, with significant benefits for interconnect density and device performance. Low-temperature direct copper bonding, in particular, will become widely adopted for a broad range of highperformance semiconductor devices in the years to come. This book offers a comprehensive review and in-depth discussions of the key topics in this critical new technology. Chapter 1 reviews the evolution and the most recent advances in semiconductor packaging, leading to the requirement for extremely fine pitch interconnection, and Chapter 2 reviews different technologies for direct copper interconnection, with advantages and disadvantages for various applications. Chapter 3 offers an in-depth review of the hybrid bonding technology, outlining the critical processes and solutions. The area of materials for hybrid bonding is covered in Chapter 4, followed by several chapters that are focused on critical process steps and equipment for copper electrodeposition (Chapter 5), planarization (Chapter 6), wafer bonding (Chapter 7), and die bonding (Chapter 8). Aspects related to product applications are covered in Chapter 9 for design and Chapter 10 for thermal simulation. Finally, Chapter 11 covers reliability considerations and computer modeling for process and performance characterization, followed by the final chapter (Chapter 12) outlining the current and future applications of the hybrid bonding technology. Metrology and testing are also addressed throughout the chapters. Business, economic, and supply chain considerations are discussed as related to the product applications and manufacturing deployment of the technology, and the current status and future outlook as related to the various aspects of the ecosystem are outlined in the relevant chapters of the book. The book is aimed at academic and industry researchers as well as industry practitioners, and is intended to serve as a comprehensive source of the most up-to-date knowledge, and a review of the state-of-the art of the technology and applications, for direct copper interconnection and advanced semiconductor packaging in general.




Amorphous Silicon Thin-Film Transistors


Book Description

This book explains the basic elements that readers need to know about amorphous silicon material and a-Si:H TFTs. It includes the main principles of the transistors operation, modeling and applications. Fundamentals about transport mechanisms in a-Si:H TFTs and the associated electronic properties are introduced and extended to design examples and strategies to build reliable, large-area, performance optimized circuits. The book also reviews the effect of the amorphous silicon nature and how it impacts the transistors properties and their relevant applications. Fundamentals are made as simple as possible to be easily grasped as they cover everything expected to be important for an easy understanding of the introduced concepts. The author’s approach is geared toward undergraduate and graduate students, but the content is also appropriate for circuit simulator developers, integrated circuit designers and manufacturers, as well as everyone engaged in work on large area integrated circuit technologies and photovoltaics.




GaN Technology


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VLSI, Communication and Signal Processing


Book Description

This book covers a variety of topics in Electronics and Communication Engineering, especially in the area of microelectronics and VLSI design, communication systems and networks, and signal and image processing. The content is based on papers presented at the 5th International Conference on VLSI, Communication and Signal Processing (VCAS 2022). The book also discusses the emerging applications of novel tools and techniques in image, video, and multimedia signal processing. This book is useful to students, researchers, and professionals working in the electronics and communication domain.




75th Anniversary of the Transistor


Book Description

75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.




Nano-Interconnect Materials and Models for Next Generation Integrated Circuit Design


Book Description

Aggressive scaling of device and interconnect dimensions has resulted in many low dimensional issues in the nanometer regime. This book deals with various new generation interconnect materials and interconnect modeling and highlights the significance of novel nano interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis. Features: Focusses on materials and nanomaterials utilization in next generation interconnects based on Carbon nanotubes (CNT) and Graphene nanoribbons (GNR). Helps readers realize interconnects, interconnect models, and crosstalk noise analysis. Describes Hybrid CNT and GNR based interconnects. Presents the details of power supply voltage drop analysis in CNT and GNR interconnects. Overviews pertinent RF performance and stability analysis. This book is aimed at graduate students and researchers in electrical and materials engineering, nano/microelectronics.




Nanoscale Memristor Device and Circuits Design


Book Description

Nanoscale Memristor Device and Circuits Design provides theoretical frameworks, including (i) the background of memristors, (ii) physics of memristor and their modeling, (iii) menristive device applications, and (iv) circuit design for security and authentication. The book focuses on a broad aspect of realization of these applications as low cost and reliable devices. This is an important reference that will help materials scientists and engineers understand the production and applications of nanoscale memrister devices. A memristor is a two-terminal memory nanoscale device that stores information in terms of high/low resistance. It can retain information even when the power source is removed, i.e., "non-volatile." In contrast to MOS Transistors (MOST), which are the building blocks of all modern mobile and computing devices, memristors are relatively immune to radiation, as well as parasitic effects, such as capacitance, and can be much more reliable. This is extremely attractive for critical safety applications, such as nuclear and aerospace, where radiation can cause failure in MOST-based systems. - Outlines the major principles of circuit design for nanoelectronic applications - Explores major applications, including memristor-based memories, sensors, solar cells, or memristor-based hardware and software security applications - Assesses the major challenges to manufacturing nanoscale memristor devices at an industrial scale