3D Stacked Memory


Book Description

Our report on 3D stacked memory technology covers the Intellectual Property (Patent) landscape of this rapidly evolving technology and monitors its various sub-domains for licensing activity. We have analyzed the IP portfolios of SanDisk, Micron, Samsung, IBM and other major players to find the focus areas of their patenting efforts. Using our proprietary patent analytics tool, LexScore™, we identify the front runners in this technology domain with strong patent portfolio quality as well as a heavy patent filing activity. Using our proprietary Licensing Heat-map framework, we also predict licensing activity trend in various technology sub domains.




Handbook of 3D Integration, Volume 4


Book Description

This fourth volume of the landmark handbook focuses on the design, testing, and thermal management of 3D-integrated circuits, both from a technological and materials science perspective. Edited and authored by key contributors from top research institutions and high-tech companies, the first part of the book provides an overview of the latest developments in 3D chip design, including challenges and opportunities. The second part focuses on the test methods used to assess the quality and reliability of the 3D-integrated circuits, while the third and final part deals with thermal management and advanced cooling technologies and their integration.




3D Stacked Chips


Book Description

This book explains for readers how 3D chip stacks promise to increase the level of on-chip integration, and to design new heterogeneous semiconductor devices that combine chips of different integration technologies (incl. sensors) in a single package of the smallest possible size. The authors focus on heterogeneous 3D integration, addressing some of the most important challenges in this emerging technology, including contactless, optics-based, and carbon-nanotube-based 3D integration, as well as signal-integrity and thermal management issues in copper-based 3D integration. Coverage also includes the 3D heterogeneous integration of power sources, photonic devices, and non-volatile memories based on new materials systems.




Vertical 3D Memory Technologies


Book Description

The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and double gate memories, terrabit vertical channel and vertical gate stacked NAND flash, large scale stacking of Resistance RAM cross-point arrays, and 2.5D/3D stacking of memory and processor chips with through-silicon-via connections now and remote links later. Key features: Presents a review of the status and trends in 3-dimensional vertical memory chip technologies. Extensively reviews advanced vertical memory chip technology and development Explores technology process routes and 3D chip integration in a single reference




3D Stacked Memories for Digital Signal Processors


Book Description

Recently, three-dimensional (3D) integration technology has enabled researchers to explore novel architectures. Due to the growing memory requirements of modern signal processing applications, it was thought that digital signal processors (DSPs) could benefit from 3D memory integration technology where high-density memories are placed below processing cores. Until recently, it was believed that this integration could lower memory latencies by 45% to 60%, which would improve performance. 3D memory integration technology also allowed a large increase in the main memory bus width by using small through silicon vias (TSVs) instead of off-chip metal wires. This increase in the bus width meant each main memory request could bring more data into the last-level on-chip memory and improve the performance of streaming applications whose memory access behavior exhibits a large amount of spatial locality. My dissertation provides a more accurate 3D main memory model that demonstrates that the latency reduction of going from conventional DDR2 DRAM to 3D memory technology is roughly 4% instead of the often quoted 45% to 60%. With this model, I re-evaluate the performance impact of 3D main memory on DSPs and find the benefits from the latency savings are small. I next analyze current 3D main memory with Wide I/O, which can lower main memory latencies by 15.9% and greatly increase the main memory bus width. I demonstrate that using 3D main memory with Wide I/O and increasing the main memory bus width from 64 bits to 4,096 bits can improve the average performance of signal processing applications by 9.7%, but also increases average energy consumption by 2.6%. For energy-constraint DSPs that are often found in mobile devices, this increase may be unacceptable. To mitigate this energy increase, I propose novel techniques to dynamically scale the main memory bus width of a DSP based on the program phases of an application. These bandwidth scaling algorithms increase the main memory bus width during memory intense phases to improve performance and lower the bus width during compute intensive phases to improve energy efficiency. These algorithms can improve average DSP performance by 6.6% while increasing average energy consumption by only 0.5%.







Improving Performance of In-memory Key-value Stores Using a 3d-stacked Architecture


Book Description

Web services and cloud computing are rapidly growing as more users get online around the world and utilize the internet for a growing number of purposes. This puts more demand on in-memory key-value stores as web servers must handle a massive influx of user requests. Data centers will thus find it more challenging to meet their SLAs (Service Level Agreements), as the latency of the 90th percentile of requests may become quite unpredictable. To alleviate this growing concern, we utilize a stacked DRAM architecture as a LLC (last-level cache) that is modified to exploit some common power-law access patterns in user requests. More specifically, we observe that the majority of the memory traffic generated by a key-value store is due to requests for large values, even though large values account for a very small portion (typically around 5%) of overall requests. Thus, we choose to prioritize the cachelines that belong to large values in the stacked DRAM cache by allowing priority cachelines to only be evicted by other priority cachelines. Using this priority scheme, we are able to improve the 90th percentile request latency by as much as 42.4% over a standard stacked DRAM cache architecture.




Innovations in the Memory System


Book Description

The memory system has the potential to be a hub for future innovation. While conventional memory systems focused primarily on high density, other memory system metrics like energy, security, and reliability are grabbing modern research headlines. With processor performance stagnating, it is also time to consider new programming models that move some application computations into the memory system. This, in turn, will lead to feature-rich memory systems with new interfaces. The past decade has seen a number of memory system innovations that point to this future where the memory system will be much more than dense rows of unintelligent bits. This book takes a tour through recent and prominent research works, touching upon new DRAM chip designs and technologies, near data processing approaches, new memory channel architectures, techniques to tolerate the overheads of refresh and fault tolerance, security attacks and mitigations, and memory scheduling.







3D Integration in VLSI Circuits


Book Description

Currently, the term 3D integration includes a wide variety of different integration methods, such as 2.5-dimensional (2.5D) interposer-based integration, 3D integrated circuits (3D ICs), 3D systems-in-package (SiP), 3D heterogeneous integration, and monolithic 3D ICs. The goal of this book is to provide readers with an understanding of the latest challenges and issues in 3D integration. TSVs are not the only technology element needed for 3D integration. There are numerous other key enabling technologies required for 3D integration, and the speed of the development in this emerging field is very rapid. To provide readers with state-of-the-art information on 3D integration research and technology developments, each chapter has been contributed by some of the world’s leading scientists and experts from academia, research institutes, and industry from around the globe. Covers chip/wafer level 3D integration technology, memory stacking, reconfigurable 3D, and monolithic 3D IC. Discusses the use of silicon interposer and organic interposer. Presents architecture, design, and technology implementations for 3D FPGA integration. Describes oxide bonding, Cu/SiO2 hybrid bonding, adhesive bonding, and solder bonding. Addresses the issue of thermal dissipation in 3D integration.