Defect Oriented Testing for CMOS Analog and Digital Circuits


Book Description

Defect oriented testing is expected to play a significant role in coming generations of technology. Smaller feature sizes and larger die sizes will make ICs more sensitive to defects that can not be modeled by traditional fault modeling approaches. Furthermore, with increased level of integration, an IC may contain diverse building blocks. Such blocks include, digital logic, PLAs, volatile and non-volatile memories, and analog interfaces. For such diverse building blocks, traditional fault modeling and test approaches will become increasingly inadequate. Defect oriented testing methods have come a long way from a mere interesting academic exercise to a hard industrial reality. Many factors have contributed to its industrial acceptance. Traditional approaches of testing modern integrated circuits (ICs) have been found to be inadequate in terms of quality and economics of test. In a globally competitive semiconductor market place, overall product quality and economics have become very important objectives. In addition, electronic systems are becoming increasingly complex and demand components of highest possible quality. Testing, in general and, defect oriented testing, in particular, help in realizing these objectives. Defect Oriented Testing for CMOS Analog and Digital Circuits is the first book to provide a complete overview of the subject. It is essential reading for all design and test professionals as well as researchers and students working in the field. `A strength of this book is its breadth. Types of designs considered include analog and digital circuits, programmable logic arrays, and memories. Having a fault model does not automatically provide a test. Sometimes, design for testability hardware is necessary. Many design for testability ideas, supported by experimental evidence, are included.' ... from the Foreword by Vishwani D. Agrawal




IDDQ Testing of VLSI Circuits


Book Description

Power supply current monitoring to detect CMOS IC defects during production testing quietly laid down its roots in the mid-1970s. Both Sandia Labs and RCA in the United States and Philips Labs in the Netherlands practiced this procedure on their CMOS ICs. At that time, this practice stemmed simply from an intuitive sense that CMOS ICs showing abnormal quiescent power supply current (IDDQ) contained defects. Later, this intuition was supported by data and analysis in the 1980s by Levi (RACD, Malaiya and Su (SUNY-Binghamton), Soden and Hawkins (Sandia Labs and the University of New Mexico), Jacomino and co-workers (Laboratoire d'Automatique de Grenoble), and Maly and co-workers (Carnegie Mellon University). Interest in IDDQ testing has advanced beyond the data reported in the 1980s and is now focused on applications and evaluations involving larger volumes of ICs that improve quality beyond what can be achieved by previous conventional means. In the conventional style of testing one attempts to propagate the logic states of the suspended nodes to primary outputs. This is done for all or most nodes of the circuit. For sequential circuits, in particular, the complexity of finding suitable tests is very high. In comparison, the IDDQ test does not observe the logic states, but measures the integrated current that leaks through all gates. In other words, it is like measuring a patient's temperature to determine the state of health. Despite perceived advantages, during the years that followed its initial announcements, skepticism about the practicality of IDDQ testing prevailed. The idea, however, provided a great opportunity to researchers. New results on test generation, fault simulation, design for testability, built-in self-test, and diagnosis for this style of testing have since been reported. After a decade of research, we are definitely closer to practice.




Comparison of IDDQ and Single Stuck-at 0/1 Testing Costs


Book Description

Abstract: "Monitoring the quiescent power supply current (IDDQ) of CMOS circuits has been proposed for the detection of many common faults not modeled by the Single Line Stuck-at 0/1 Fault (SSF) model. This paper shows that a relatively small number of random vectors should provide good coverage of these faults. The results of fault simulation of the ISCAS combinational benchmark circuits are presented to demonstrate the comparative ease of IDDQ testing versus SSF testing."




Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits


Book Description

Advances in design methods and process technologies have resulted in a continuous increase in the complexity of integrated circuits (ICs). However, the increased complexity and nanometer-size features of modern ICs make them susceptible to manufacturing defects, as well as performance and quality issues. Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits covers common problems in areas such as process variations, power supply noise, crosstalk, resistive opens/bridges, and design-for-manufacturing (DfM)-related rule violations. The book also addresses testing for small-delay defects (SDDs), which can cause immediate timing failures on both critical and non-critical paths in the circuit. Overviews semiconductor industry test challenges and the need for SDD testing, including basic concepts and introductory material Describes algorithmic solutions incorporated in commercial tools from Mentor Graphics Reviews SDD testing based on "alternative methods" that explores new metrics, top-off ATPG, and circuit topology-based solutions Highlights the advantages and disadvantages of a diverse set of metrics, and identifies scope for improvement Written from the triple viewpoint of university researchers, EDA tool developers, and chip designers and tool users, this book is the first of its kind to address all aspects of SDD testing from such a diverse perspective. The book is designed as a one-stop reference for current industrial practices, research challenges in the domain of SDD testing, and recent developments in SDD solutions.




Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits


Book Description

The 2nd edition of defect oriented testing has been extensively updated. New chapters on Functional, Parametric Defect Models and Inductive fault Analysis and Yield Engineering have been added to provide a link between defect sources and yield. The chapter on RAM testing has been updated with focus on parametric and SRAM stability testing. Similarly, newer material has been incorporated in digital fault modeling and analog testing chapters. The strength of Defect Oriented Testing for nano-Metric CMOS VLSIs lies in its industrial relevance.




Microelectronics Failure Analysis


Book Description

For newcomers cast into the waters to sink or swim as well as seasoned professionals who want authoritative guidance desk-side, this hefty volume updates the previous (1999) edition. It contains the work of expert contributors who rallied to the job in response to a committee's call for help (the committee was assigned to the update by the Electron




Iddq Testing for CMOS VLSI


Book Description

This book discusses in detail the correlation between physical defects and logic faults, and shows you how Iddq testing locates these defects. The book provides planning guidelines and optimization methods and is illustrated with numerous examples ranging from simple circuits to extensive case studies.