Book Description

This report describes the research accomplished during the last twelve months of a 20-month program of research on metal contacts to the semiconductor indium phosphide (InP). The Schottky barrier energy phi sub B and the contact resistance r(c) were measured for several metal-InP structures and the electrical properties were correlated to the metallurgical properties obtained with Auger electron spectroscopy (AES). Separate measurement of phi sub B on both n-type and p-type InP was carried out using Al as the metal Electrode. Control samples of Al/GaAs and Al/Si diodes were fabricated simultaneously in order to evaluate fabrication procedures. The Al/InP diodes were rectifying and phi sub B(n) less than phi sub B(p), in agreement with our earlier work on Pd/InP diodes. Ohmic contacts to p-type InP were also investigated. The results of a study of a multilayered metal film consisting of Au and Be alloyed to the InP surface, are given. In was found that the Au/Be/p-InP structure when properly heat treated would produce ohmic behavior with r(c) = 0.001 ohm sq cm at a net doping of about 1.0 x 10 to the 17th power per cu cm and r(c) = 0.0002 ohm sq cm at 1.4 x 10 to the 18th power per cu cm. The Au/Be contact was relatively easy to apply but tight control over the Au/Be thickness ratio and heat-treatment cycle was found to be necessary. (Author).