Author : Athanasios Dimoulas
Publisher : Springer Science & Business Media
Page : 397 pages
File Size : 26,23 MB
Release : 2008-01-01
Category : Technology & Engineering
ISBN : 354071491X
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author : Fred Roozeboom
Publisher : The Electrochemical Society
Page : 472 pages
File Size : 36,16 MB
Release : 2006
Category : Gate array circuits
ISBN : 1566775027
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author :
Publisher :
Page : 658 pages
File Size : 48,8 MB
Release : 2005
Category : Technology & Engineering
ISBN :
Author : E. P. Gusev
Publisher : The Electrochemical Society
Page : 426 pages
File Size : 25,16 MB
Release : 2010-04
Category : Science
ISBN : 1566777917
These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author : Eylem Durgun Özben
Publisher : Forschungszentrum Jülich
Page : 123 pages
File Size : 13,41 MB
Release : 2014-03-20
Category :
ISBN : 3893369414
Author : V. Narayanan
Publisher : The Electrochemical Society
Page : 367 pages
File Size : 27,49 MB
Release : 2009-05
Category : Gate array circuits
ISBN : 1566777097
This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author : Y. Omura
Publisher : The Electrochemical Society
Page : 337 pages
File Size : 28,80 MB
Release : 2015
Category :
ISBN : 1607685957
Author : P. J. Timans
Publisher : The Electrochemical Society
Page : 488 pages
File Size : 49,1 MB
Release : 2008-05
Category : Gate array circuits
ISBN : 1566776260
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author : S. Kar
Publisher : The Electrochemical Society
Page : 203 pages
File Size : 25,25 MB
Release : 2014
Category :
ISBN : 1607685450
Author : S. Kar
Publisher : The Electrochemical Society
Page : 550 pages
File Size : 14,36 MB
Release : 2008-10
Category : Dielectrics
ISBN : 1566776511
The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
