Book Description

Comprising the proceedings of an MRS symposium held in April of 1998, contributions in this volume are divided into ten sections: interconnection frontiers; aluminum interconnects; cobalt and other silicides; titanium silicide; MOSFET, source, drain, and interconnect engineering; copper interconnects and barriers; a poster session on advanced interconnects and contacts; contacts to compound semiconductor devices; novel interconnect materials and schemes; and diffusion barriers. Annotation copyrighted by Book News, Inc., Portland, OR