Fabrication, Performance and Degradation Mechanism of Aluminum Gallium Nitride/gallium Nitride Heterostructure Field-effect Transistors


Book Description

Tremendous efforts to realize the potential of Al-GaN/GaN HFETs have been made over the last decade focusing on improving microwave power performance via optimizing material growth and semiconductor processing technologies. As the device performance is getting mature, the device's reliability becomes a major concern for manufacturability of commercially available AlGaN/GaN HFETs. However, comprehensive study on the reliability of these devices is still lacking.










JJAP


Book Description