Applied Solid State Science - Supplement 2
Author : Raymond Wolfe
Publisher :
Page : pages
File Size : 22,27 MB
Release : 1981
Category :
ISBN :
Author : Raymond Wolfe
Publisher :
Page : pages
File Size : 22,27 MB
Release : 1981
Category :
ISBN :
Author : Raymond Wolfe
Publisher :
Page : 416 pages
File Size : 47,10 MB
Release : 1981
Category : Solid state physics
ISBN :
Author : Raymond Wolfe
Publisher :
Page : 288 pages
File Size : 38,79 MB
Release : 1976
Category :
ISBN : 9780120029068
Author :
Publisher :
Page : pages
File Size : 24,82 MB
Release : 1969
Category : Semiconductors
ISBN :
Author : Raymond Wolfe
Publisher :
Page : pages
File Size : 42,85 MB
Release : 1975
Category :
ISBN :
Author : Raymond Wolfe
Publisher : Academic Press
Page : 335 pages
File Size : 49,41 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 1483214710
Applied Solid State Science: Advances in Materials and Device Research, Volume 2 covers topics about complex oxide materials such as the garnets, which dominate the field of magnetoelasticity and are among the most important laser hosts, and sodalite, which is one of the classic photochromic materials. The book discusses the physics of the interactions of electromagnetic, elastic, and spin waves in single crystal magnetic insulators. The text then describes the mechanism on which inorganic photochromic materials are based, as observed in a variety of materials in single crystal, powder, and glass forms; as well as the chemistry and growth of single crystal materials. Solid state physicists, materials scientists, electrical engineers, and graduate students studying the subjects being discussed will find the book invaluable.
Author : Raymond Wolfe
Publisher :
Page : pages
File Size : 35,93 MB
Release : 1969
Category : Semiconductors
ISBN :
Author : Roland Levy
Publisher : Springer Science & Business Media
Page : 1006 pages
File Size : 15,72 MB
Release : 1989-01-31
Category : Technology & Engineering
ISBN : 9780792301547
The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Author : Raymond Wolfe
Publisher :
Page : 263 pages
File Size : 31,40 MB
Release : 1977
Category : Semiconductors
ISBN :
Author : Dawon Kahng
Publisher : Academic Press
Page : 429 pages
File Size : 17,80 MB
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 1483273113
Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters—physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This publication is a good source for students and individuals interested in MOS-based integrated circuits.