Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices


Book Description

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.




Radiation Effects on Integrated Circuits and Systems for Space Applications


Book Description

This book provides readers with invaluable overviews and updates of the most important topics in the radiation-effects field, enabling them to face significant challenges in the quest for the insertion of ever-higher density and higher performance electronic components in satellite systems. Readers will benefit from the up-to-date coverage of the various primary (classical) sub-areas of radiation effects, including the space and terrestrial radiation environments, basic mechanisms of total ionizing dose, digital and analog single-event transients, basic mechanisms of single-event effects, system-level SEE analysis, device-level, circuit-level and system-level hardening approaches, and radiation hardness assurance. Additionally, this book includes in-depth discussions of several newer areas of investigation, and current challenges to the radiation effects community, such as radiation hardening by design, the use of Commercial-Off-The-Shelf (COTS) components in space missions, CubeSats and SmallSats, the use of recent generation FPGA’s in space, and new approaches for radiation testing and validation. The authors provide essential background and fundamentals, in addition to information on the most recent advances and challenges in the sub-areas of radiation effects. Provides a concise introduction to the fundamentals of radiation effects, latest research results, and new test methods and procedures; Discusses the radiation effects and mitigation solutions for advanced integrated circuits and systems designed to operate in harsh radiation environments; Includes coverage of the impact of Small Satellites in the space industry.




Ionizing Radiation Effects in Electronics


Book Description

Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.




Basic Mechanisms of Radiation Effects in Electronic Materials and Devices


Book Description

This report reviews the primary physical processes underlying the response of electronic materials and devices to radiation as well as the relationship of these processes to the modes of circuit degradation and failure. An overview presents brief discussions of the major radiation environments of practical interest, the interaction of radiation with solid targets, common terminology of radiation exposure, and the primary radiation effects in electronic materials, including ionization effects (radiation-induced photocurrents and space charge buildup) and atomic displacement damage effects. An emphasis is given to the problem of total-dose ionization response, primarily in metal-oxide-semiconductor (MOS) systems. In particular, a description of the basic physical phenomena underlying the complex time history of the MOS radiation response is given, and some implications of the time-dependent response for issues of radiation testing, hardness assurance and radiation response prediction are pointed out. There is also discussion on the implications of scaling down the gate oxide thickness and on the increasingly important problem of radiation-induced leakage currents. Keywords: Radiation effects, Ionizing radiation, Nuclear weapons effects, Microelectronics, Metal oxide semiconductor devices, Bipolar devices, Total dose ionization, Transient radiation, Single event upset.




Radiation Effects of Advanced Electronic Devices and Circuits


Book Description

As integrated circuit technologies continue to scale down and electronic devices become more complex, their susceptibility to ionizing radiation has introduced numerous exciting challenges, anticipated to drive research over the next decade. Consequently, new solutions are necessary to mitigate radiation sensitivity in advanced devices and integrated circuits. The aim of this reprint is to disclose the basic mechanisms of radiation effects for advanced devices and the breakthrough of new solutions to assess and mitigate radiation sensitivity in advanced devices and integrated circuits. This reprint presents new modeling approaches that predict how radiation impacts electronic devices and circuits. Accurate models are essential for designing devices that can tolerate radiation without significant performance degradation. We also focus on the innovative design and fabrication techniques that enhance the radiation tolerance of integrated circuits. Moreover, some discussions highlight new testing protocols and methodologies that provide more accurate and comprehensive evaluations of radiation hardness, as well as the latest advancements and trends that are of particular interest to researchers and professionals in the radiation effects community. Overall, this issue offers valuable insights into the challenges and opportunities in this rapidly evolving field, highlighting the critical importance of continued innovation and collaboration to address the complex problems posed by radiation in modern electronics.




Investigation of the Basic Mechanisms of Radiation Effects on Electronics and Development of Radiation Hardening Procedures


Book Description

This report describes results of a study of radiation effects on electronic materials, devices, and integrated circuits. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with these materials and components with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. Results of analytical and experimental studies of the mechanisms of neutron effects on VLSI structures are presented. The issue of whether a single neutron-produced defect cluster can produce a significant amount of permanent damage ('hand error') in a VLSI cell is addressed. The results obtained suggest that hard errors may occur at relatively modest neutron fluences. An experiment using a scanning electron microscope was initiated in which an attempt is being made to observe individual defect clusters through their effect on carrier recombination. Thermally stimulated current measurements have been performed on irradiated Si0 sub 2 films in order to obtain basic mechanisms information regarding the nature of hole traps at the Si0 sub 2-Si interface. A hole trap distribution ranging in energy (with respect to the valence band) from 9.7 to 1.3 eV was found, with energy peaks at 0.9 and 1.1 eV being tentatively assigned. An investigation of the effects of ionizing radiation on mercury cadmium telluride MIS devices has been performed. The net charge buildup measured in these devices following 77 K irradiation is attributed to the charge trapped in the interfacial region between the insulating film and the HgCdTe substrate.