Carbon Doping of III-V Compound Semiconductors
Author : Amy Jo Moll
Publisher :
Page : 288 pages
File Size : 10,49 MB
Release : 1994
Category :
ISBN :
Author : Amy Jo Moll
Publisher :
Page : 288 pages
File Size : 10,49 MB
Release : 1994
Category :
ISBN :
Author : Keh Yung Cheng
Publisher : Springer Nature
Page : 537 pages
File Size : 33,9 MB
Release : 2020-11-08
Category : Technology & Engineering
ISBN : 3030519031
This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author : S. N. G. Chu
Publisher : The Electrochemical Society
Page : 324 pages
File Size : 28,6 MB
Release : 1995
Category : Technology & Engineering
ISBN : 9781566770934
Author : Paul H. Holloway
Publisher : Cambridge University Press
Page : 937 pages
File Size : 26,4 MB
Release : 2008-10-19
Category : Technology & Engineering
ISBN : 0080946143
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Author : S. J. Pearton
Publisher : Mrs Proceedings
Page : 944 pages
File Size : 29,18 MB
Release : 1992-04-10
Category : Technology & Engineering
ISBN :
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Anthony C. Jones
Publisher : John Wiley & Sons
Page : 352 pages
File Size : 41,17 MB
Release : 2008-11-20
Category : Science
ISBN : 3527614621
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Author : S. J. Pearton
Publisher : World Scientific
Page : 568 pages
File Size : 31,60 MB
Release : 1996
Category : Technology & Engineering
ISBN : 9789810218843
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author : Devendra K. Sadana
Publisher : Mrs Proceedings
Page : 758 pages
File Size : 29,37 MB
Release : 1989-11-20
Category : Science
ISBN :
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author :
Publisher :
Page : 736 pages
File Size : 30,80 MB
Release : 1995
Category : Patents
ISBN :
Author : D. Nirmal
Publisher : CRC Press
Page : 434 pages
File Size : 14,98 MB
Release : 2019-05-14
Category : Science
ISBN : 0429862520
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots